Theory of 3d Transition Atom Impurities in Semiconductors

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Original language	American English
Title of host publication	Annual Review of Materials Science
Subtitle of host publication	Volume 15
Editors	R. A. Huggins, J. A. Giordmaine, J. B. Wachtman
Pages	411-453
DOIs	https://doi.org/10.1146/annurev.ms.15.080185.002211
State	Published - 1985

NLR Publication Number

@inbook{52eb89e8b46246c1ac7eb9a0d5ab2765,

title = "Theory of 3d Transition Atom Impurities in Semiconductors",

author = "NREL",

year = "1985",

doi = "10.1146/annurev.ms.15.080185.002211",

language = "American English",

pages = "411--453",

editor = "Huggins, \{R. A.\} and Giordmaine, \{J. A.\} and Wachtman, \{J. B.\}",

booktitle = "Annual Review of Materials Science",

}