Theory of Deep Substitutional Sp3-bonded Impurity Levels and Core Excitons at Semiconductor Interfaces

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)993-996
    Number of pages4
    JournalJournal of vacuum science & technology
    Issue number5
    StatePublished - 1980

    Bibliographical note

    Work performed by Department of Physics, the Materials Research Laboratory, and the Coordinated Sciences Laboratory, University of Illinois of Urbana-Champaign,Urbana, Illinois; the Photovoltaics Branch, Solar Energy Research Institute; the Department of Physics, Texas A&M University, College Station, Texas; and the Universitat Bayreuth, Bayreuth, Germany

    NREL Publication Number

    • ACNR/JA-5076

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