Theory of Silicon Nanostructures

doi:10.1016/0169-4332(96)00078-5

Theory of Silicon Nanostructures

Research output: Contribution to journal › Article › peer-review

Abstract

Empirical pseudopotential plane wave theory is used to study the electronic and optical properties of thousand atom hydrogen passivated Si quantum dots, wires and films. The properties studied include: (1) band gap vs. size; (2) band gap vs. shape; (3) total electronic density of state and optical absorption spectra; (4) dielectric constant vs. size. The results are compared with tight bindingand other model calculations. Comparison with recent experimental data is discussed.

Original language	American English
Pages (from-to)	350-359
Number of pages	10
Journal	Applied Surface Science
Volume	102
DOIs	https://doi.org/10.1016/0169-4332(96)00078-5
State	Published - 1996

NREL Publication Number

NREL/JA-450-23052

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10.1016/0169-4332(96)00078-5

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@article{0dabde0bd8ce42c79011c17adac81a1d,

title = "Theory of Silicon Nanostructures",

abstract = "Empirical pseudopotential plane wave theory is used to study the electronic and optical properties of thousand atom hydrogen passivated Si quantum dots, wires and films. The properties studied include: (1) band gap vs. size; (2) band gap vs. shape; (3) total electronic density of state and optical absorption spectra; (4) dielectric constant vs. size. The results are compared with tight bindingand other model calculations. Comparison with recent experimental data is discussed.",

author = "NREL",

year = "1996",

doi = "10.1016/0169-4332(96)00078-5",

language = "American English",

volume = "102",

pages = "350--359",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Theory of Silicon Nanostructures

AU - NREL, null

PY - 1996

Y1 - 1996

N2 - Empirical pseudopotential plane wave theory is used to study the electronic and optical properties of thousand atom hydrogen passivated Si quantum dots, wires and films. The properties studied include: (1) band gap vs. size; (2) band gap vs. shape; (3) total electronic density of state and optical absorption spectra; (4) dielectric constant vs. size. The results are compared with tight bindingand other model calculations. Comparison with recent experimental data is discussed.

AB - Empirical pseudopotential plane wave theory is used to study the electronic and optical properties of thousand atom hydrogen passivated Si quantum dots, wires and films. The properties studied include: (1) band gap vs. size; (2) band gap vs. shape; (3) total electronic density of state and optical absorption spectra; (4) dielectric constant vs. size. The results are compared with tight bindingand other model calculations. Comparison with recent experimental data is discussed.

U2 - 10.1016/0169-4332(96)00078-5

DO - 10.1016/0169-4332(96)00078-5

M3 - Article

SN - 0169-4332

VL - 102

SP - 350

EP - 359

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Theory of Silicon Nanostructures

Abstract

NREL Publication Number

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