Abstract
The characteristics of GaAs solar cells after 200 hours of annealing at 400-450 °C are reported. The room-temperature reflectivity and external quantum efficiency (EQE) are unchanged after such heat treatments, and peak EQE values of 90% are observed both before and after. At an operating temperature of 400 °C, the performance of annealed cells was only slightly worse than cells that had not undergone any annealing; Voc = 0.55 V and FF = 66% were demonstrated for annealed cells tested at 400 °C under strong optical injection. These results constitute a promising first step towards photovoltaic applications that demand stable operation at elevated temperatures.
Original language | American English |
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Pages | 2385-2388 |
Number of pages | 4 |
DOIs | |
State | Published - 18 Nov 2016 |
Event | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016 |
Conference
Conference | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 |
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Country/Territory | United States |
City | Portland |
Period | 5/06/16 → 10/06/16 |
Bibliographical note
Publisher Copyright:© 2016 IEEE.
NREL Publication Number
- NREL/CP-5J00-67987
Keywords
- GaAs
- solar cells
- thermal stability