Thermal Stability of GaAs Solar Cells for High Temperature Applications

Yukun Sun, Joseph Faucher, Daehwan Jung, Michelle Vaisman, Clay McPheeters, Paul Sharps, Emmett Perl, John Simon, Myles Steiner, Daniel Friedman, Minjoo Larry Lee

Research output: Contribution to conferencePaperpeer-review

11 Scopus Citations

Abstract

The characteristics of GaAs solar cells after 200 hours of annealing at 400-450 °C are reported. The room-temperature reflectivity and external quantum efficiency (EQE) are unchanged after such heat treatments, and peak EQE values of 90% are observed both before and after. At an operating temperature of 400 °C, the performance of annealed cells was only slightly worse than cells that had not undergone any annealing; Voc = 0.55 V and FF = 66% were demonstrated for annealed cells tested at 400 °C under strong optical injection. These results constitute a promising first step towards photovoltaic applications that demand stable operation at elevated temperatures.

Original languageAmerican English
Pages2385-2388
Number of pages4
DOIs
StatePublished - 18 Nov 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: 5 Jun 201610 Jun 2016

Conference

Conference43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/TerritoryUnited States
CityPortland
Period5/06/1610/06/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

NREL Publication Number

  • NREL/CP-5J00-67987

Keywords

  • GaAs
  • solar cells
  • thermal stability

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