Thermal Stability of GaAs Solar Cells for High Temperature Applications

Yukun Sun; Joseph Faucher; Daehwan Jung; Michelle Vaisman; Clay McPheeters; Paul Sharps; Emmett Perl; John Simon; Myles Steiner; Daniel Friedman; Minjoo Larry Lee

doi:10.1109/PVSC.2016.7750068

Thermal Stability of GaAs Solar Cells for High Temperature Applications

Yukun Sun
, Joseph Faucher
, Daehwan Jung
, Michelle Vaisman
, Clay McPheeters
, Paul Sharps
, Emmett Perl
, John Simon
, Myles Steiner
, Daniel Friedman
, Minjoo Larry Lee

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

14 Scopus Citations

Abstract

The characteristics of GaAs solar cells after 200 hours of annealing at 400-450 °C are reported. The room-temperature reflectivity and external quantum efficiency (EQE) are unchanged after such heat treatments, and peak EQE values of 90% are observed both before and after. At an operating temperature of 400 °C, the performance of annealed cells was only slightly worse than cells that had not undergone any annealing; Voc = 0.55 V and FF = 66% were demonstrated for annealed cells tested at 400 °C under strong optical injection. These results constitute a promising first step towards photovoltaic applications that demand stable operation at elevated temperatures.

Original language	American English
Pages	2385-2388
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2016.7750068 https://doi.org/10.1109/PVSC.2016.7750068
State	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

NLR Publication Number

NREL/CP-5J00-67987

Keywords

GaAs
solar cells
thermal stability

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Sun, Y., Faucher, J., Jung, D., Vaisman, M., McPheeters, C., Sharps, P., Perl, E., Simon, J., Steiner, M., Friedman, D., & Lee, M. L. (2016). Thermal Stability of GaAs Solar Cells for High Temperature Applications. 2385-2388. Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States. https://doi.org/10.1109/PVSC.2016.7750068, https://doi.org/10.1109/PVSC.2016.7750068

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title = "Thermal Stability of GaAs Solar Cells for High Temperature Applications",

abstract = "The characteristics of GaAs solar cells after 200 hours of annealing at 400-450 °C are reported. The room-temperature reflectivity and external quantum efficiency (EQE) are unchanged after such heat treatments, and peak EQE values of 90\% are observed both before and after. At an operating temperature of 400 °C, the performance of annealed cells was only slightly worse than cells that had not undergone any annealing; Voc = 0.55 V and FF = 66\% were demonstrated for annealed cells tested at 400 °C under strong optical injection. These results constitute a promising first step towards photovoltaic applications that demand stable operation at elevated temperatures.",

keywords = "GaAs, solar cells, thermal stability",

author = "Yukun Sun and Joseph Faucher and Daehwan Jung and Michelle Vaisman and Clay McPheeters and Paul Sharps and Emmett Perl and John Simon and Myles Steiner and Daniel Friedman and Lee, \{Minjoo Larry\}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

month = nov,

day = "18",

doi = "10.1109/PVSC.2016.7750068",

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Sun, Y, Faucher, J, Jung, D, Vaisman, M, McPheeters, C, Sharps, P, Perl, E, Simon, J , Steiner, M , Friedman, D & Lee, ML 2016, 'Thermal Stability of GaAs Solar Cells for High Temperature Applications', Paper presented at 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16 - 10/06/16 pp. 2385-2388. https://doi.org/10.1109/PVSC.2016.7750068, https://doi.org/10.1109/PVSC.2016.7750068

TY - CONF

T1 - Thermal Stability of GaAs Solar Cells for High Temperature Applications

AU - Sun, Yukun

AU - Faucher, Joseph

AU - Jung, Daehwan

AU - Vaisman, Michelle

AU - McPheeters, Clay

AU - Sharps, Paul

AU - Perl, Emmett

AU - Simon, John

AU - Steiner, Myles

AU - Friedman, Daniel

AU - Lee, Minjoo Larry

PY - 2016/11/18

Y1 - 2016/11/18

N2 - The characteristics of GaAs solar cells after 200 hours of annealing at 400-450 °C are reported. The room-temperature reflectivity and external quantum efficiency (EQE) are unchanged after such heat treatments, and peak EQE values of 90% are observed both before and after. At an operating temperature of 400 °C, the performance of annealed cells was only slightly worse than cells that had not undergone any annealing; Voc = 0.55 V and FF = 66% were demonstrated for annealed cells tested at 400 °C under strong optical injection. These results constitute a promising first step towards photovoltaic applications that demand stable operation at elevated temperatures.

AB - The characteristics of GaAs solar cells after 200 hours of annealing at 400-450 °C are reported. The room-temperature reflectivity and external quantum efficiency (EQE) are unchanged after such heat treatments, and peak EQE values of 90% are observed both before and after. At an operating temperature of 400 °C, the performance of annealed cells was only slightly worse than cells that had not undergone any annealing; Voc = 0.55 V and FF = 66% were demonstrated for annealed cells tested at 400 °C under strong optical injection. These results constitute a promising first step towards photovoltaic applications that demand stable operation at elevated temperatures.

KW - GaAs

KW - solar cells

KW - thermal stability

UR - https://www.scopus.com/pages/publications/85003451702

U2 - 10.1109/PVSC.2016.7750068

DO - 10.1109/PVSC.2016.7750068

M3 - Paper

AN - SCOPUS:85003451702

SP - 2385

EP - 2388

T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

Thermal Stability of GaAs Solar Cells for High Temperature Applications

Abstract

Conference

Bibliographical note

NLR Publication Number

Keywords

Access to Document

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