Abstract
Thermal treatment in Sb2S3 vapor was used to improve the quality of CuSbS2 thin films, a promising non-toxic and earth-abundant absorber. A change in the CuSbS2 crystallographic texture and a decrease in the lattice stress were observed, as well as increases in the grain size, photoluminescence intensity and photoconductivity. To eliminate the influence of the possible Sb2S3 rich surface layer on photovoltaic performance, a selective chemical etching with KOH was developed.
Original language | American English |
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Number of pages | 5 |
DOIs | |
State | Published - 14 Dec 2015 |
Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015 |
Conference
Conference | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
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Country/Territory | United States |
City | New Orleans |
Period | 14/06/15 → 19/06/15 |
Bibliographical note
Publisher Copyright:© 2015 IEEE.
NREL Publication Number
- NREL/CP-5K00-64232
Keywords
- annealing
- CuSbS2
- non-toxic and earth-abundant absorber
- Sb2S3 selective chemical etch