Thermal Treatment Improvement of CuSbS2 Absorbers

Francisco Willian De Souza Lucas, Adam W. Welch, Lauryn L. Baranowski, Patricia C. Dippo, Lucia H. Mascaro, Andriy Zakutayev

Research output: Contribution to conferencePaperpeer-review

5 Scopus Citations


Thermal treatment in Sb2S3 vapor was used to improve the quality of CuSbS2 thin films, a promising non-toxic and earth-abundant absorber. A change in the CuSbS2 crystallographic texture and a decrease in the lattice stress were observed, as well as increases in the grain size, photoluminescence intensity and photoconductivity. To eliminate the influence of the possible Sb2S3 rich surface layer on photovoltaic performance, a selective chemical etching with KOH was developed.

Original languageAmerican English
Number of pages5
StatePublished - 14 Dec 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: 14 Jun 201519 Jun 2015


Conference42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/TerritoryUnited States
CityNew Orleans

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

NREL Publication Number

  • NREL/CP-5K00-64232


  • annealing
  • CuSbS2
  • non-toxic and earth-abundant absorber
  • Sb2S3 selective chemical etch


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