Thermally Processed High-Mobility MOS Thin-Film Transistors on Transferable Single-Crystal Elastically Strain-Sharing Si/SiGe/Si Nanomembranes

doi:10.1109/TED.2007.914833

Thermally Processed High-Mobility MOS Thin-Film Transistors on Transferable Single-Crystal Elastically Strain-Sharing Si/SiGe/Si Nanomembranes

Research output: Contribution to journal › Article › peer-review

Original language	American English
Pages (from-to)	810-815
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	3
DOIs	https://doi.org/10.1109/TED.2007.914833
State	Published - 2008

NREL Publication Number

NREL/JA-520-43467

Access to Document

10.1109/TED.2007.914833

Cite this

@article{9a00355525da4d14b2064e4a6b06f2ca,

title = "Thermally Processed High-Mobility MOS Thin-Film Transistors on Transferable Single-Crystal Elastically Strain-Sharing Si/SiGe/Si Nanomembranes",

author = "NREL",

year = "2008",

doi = "10.1109/TED.2007.914833",

language = "American English",

volume = "55",

pages = "810--815",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Thermally Processed High-Mobility MOS Thin-Film Transistors on Transferable Single-Crystal Elastically Strain-Sharing Si/SiGe/Si Nanomembranes

AU - NREL, null

PY - 2008

Y1 - 2008

U2 - 10.1109/TED.2007.914833

DO - 10.1109/TED.2007.914833

M3 - Article

SN - 0018-9383

VL - 55

SP - 810

EP - 815

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -