Thickness Dependence of Electroluminescence in a-Si:H P-I-N Devices

Thickness Dependence of Electroluminescence in a-Si:H P-I-N Devices

Research output: Contribution to conference › Paper

Original language	American English
Pages	857-862
Number of pages	6
State	Published - 1993
Event	Amorphous Silicon Technology - 1993: Materials Research Society Symposium - San Francisco, California Duration: 13 Apr 1993 → 16 Apr 1993

Conference

Conference	Amorphous Silicon Technology - 1993: Materials Research Society Symposium
City	San Francisco, California
Period	13/04/93 → 16/04/93

Bibliographical note

Work performed by University of North Carolina, Chapel Hill, North Carolina

NREL Publication Number

ACNR/CP-14401

Cite this

@conference{aaab45ae2bbb42e0b9e107ca89277f65,

title = "Thickness Dependence of Electroluminescence in a-Si:H P-I-N Devices",

author = "NREL",

note = "Work performed by University of North Carolina, Chapel Hill, North Carolina; Amorphous Silicon Technology - 1993: Materials Research Society Symposium ; Conference date: 13-04-1993 Through 16-04-1993",

year = "1993",

language = "American English",

pages = "857--862",

}