Thickness Dependence of Photoelectrical Properties of Intrinsic Amorphous Silicon

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)191-199
    Number of pages9
    JournalSolar Cells
    Volume23
    Issue number3-4
    DOIs
    StatePublished - 1988

    Bibliographical note

    Work performed by Department of Electrical and Computer Engineering, State University of New York at Buffalo, Buffalo, New York, and the Solar Energy Research Institute, Golden, Colorado

    NREL Publication Number

    • ACNR/JA-212-10412

    Cite this