Thickness Evolution of the Microstructure of Si:H Films in the Amorphous-to-Microcrystalline Phase Transition Region

R. W. Collins; G. M. Ferreira; A. S. Ferlauto; R. J. Koval; J. M. Pearce; C. R. Wronski; M. M. Al-Jassim; K. M. Jones

Thickness Evolution of the Microstructure of Si:H Films in the Amorphous-to-Microcrystalline Phase Transition Region

R. W. Collins, G. M. Ferreira, A. S. Ferlauto, R. J. Koval, J. M. Pearce, C. R. Wronski, M. M. Al-Jassim, K. M. Jones

Materials Science

Research output: Contribution to conference › Paper › peer-review

1 Scopus Citations

Abstract

Real time spectroscopic ellipsometry (RTSE) has been applied to develop deposition phase diagrams that describe the thickness evolution of the phase of hydrogenated silicon (Si:H) thin films. Such diagrams can be applied to establish optimization principles for the intrinsic (i-) layers incorporated into high performance solar cells based on amorphous Si:H (a-Si:H). The phase diagrams for the growth of Si:H on a-Si:H film substrates incorporate two transitions versus accumulated thickness, the first from the amorphous to the mixed-phase (amorphous + microcrystalline) growth regime [the a→(a+μc) transition] and the second from the mixed-phase to single-phase microcrystalline growth regime [the (a+μc)→μc transition]. Methods have been developed to extract the evolution of the volume fraction of microcrystalline Si:H (μc-Si:H) within the mixed-phase growth regime. Similar deposition phase diagrams have also been developed to optimize p-type Si:H layers for a-Si:H-based n-i-p and p-i-n cells.

Original language	American English
Pages	2767-2772
Number of pages	6
State	Published - 2003
Event	3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3): Joint Conference of 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, and 18th European PV Solar Energy Conference - Osaka, Japan Duration: 11 May 2003 → 18 May 2003

Conference

Conference	3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3): Joint Conference of 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, and 18th European PV Solar Energy Conference
City	Osaka, Japan
Period	11/05/03 → 18/05/03

NREL Publication Number

NREL/CP-520-36516

Cite this

Collins, R. W., Ferreira, G. M., Ferlauto, A. S., Koval, R. J., Pearce, J. M., Wronski, C. R., Al-Jassim, M. M., & Jones, K. M. (2003). Thickness Evolution of the Microstructure of Si:H Films in the Amorphous-to-Microcrystalline Phase Transition Region. 2767-2772. Paper presented at 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3): Joint Conference of 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, and 18th European PV Solar Energy Conference, Osaka, Japan.

Collins, R. W. ; Ferreira, G. M. ; Ferlauto, A. S. et al. / Thickness Evolution of the Microstructure of Si:H Films in the Amorphous-to-Microcrystalline Phase Transition Region. Paper presented at 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3): Joint Conference of 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, and 18th European PV Solar Energy Conference, Osaka, Japan.6 p.

@conference{55844e49ed004137b576b499d7fb4fed,

title = "Thickness Evolution of the Microstructure of Si:H Films in the Amorphous-to-Microcrystalline Phase Transition Region",

abstract = "Real time spectroscopic ellipsometry (RTSE) has been applied to develop deposition phase diagrams that describe the thickness evolution of the phase of hydrogenated silicon (Si:H) thin films. Such diagrams can be applied to establish optimization principles for the intrinsic (i-) layers incorporated into high performance solar cells based on amorphous Si:H (a-Si:H). The phase diagrams for the growth of Si:H on a-Si:H film substrates incorporate two transitions versus accumulated thickness, the first from the amorphous to the mixed-phase (amorphous + microcrystalline) growth regime [the a→(a+μc) transition] and the second from the mixed-phase to single-phase microcrystalline growth regime [the (a+μc)→μc transition]. Methods have been developed to extract the evolution of the volume fraction of microcrystalline Si:H (μc-Si:H) within the mixed-phase growth regime. Similar deposition phase diagrams have also been developed to optimize p-type Si:H layers for a-Si:H-based n-i-p and p-i-n cells.",

author = "Collins, {R. W.} and Ferreira, {G. M.} and Ferlauto, {A. S.} and Koval, {R. J.} and Pearce, {J. M.} and Wronski, {C. R.} and Al-Jassim, {M. M.} and Jones, {K. M.}",

year = "2003",

language = "American English",

pages = "2767--2772",

note = "3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3): Joint Conference of 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, and 18th European PV Solar Energy Conference ; Conference date: 11-05-2003 Through 18-05-2003",

}

Collins, RW, Ferreira, GM, Ferlauto, AS, Koval, RJ, Pearce, JM, Wronski, CR, Al-Jassim, MM & Jones, KM 2003, 'Thickness Evolution of the Microstructure of Si:H Films in the Amorphous-to-Microcrystalline Phase Transition Region', Paper presented at 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3): Joint Conference of 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, and 18th European PV Solar Energy Conference, Osaka, Japan, 11/05/03 - 18/05/03 pp. 2767-2772.

Thickness Evolution of the Microstructure of Si:H Films in the Amorphous-to-Microcrystalline Phase Transition Region. / Collins, R. W.; Ferreira, G. M.; Ferlauto, A. S. et al.
2003. 2767-2772 Paper presented at 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3): Joint Conference of 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, and 18th European PV Solar Energy Conference, Osaka, Japan.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Thickness Evolution of the Microstructure of Si:H Films in the Amorphous-to-Microcrystalline Phase Transition Region

AU - Collins, R. W.

AU - Ferreira, G. M.

AU - Ferlauto, A. S.

AU - Koval, R. J.

AU - Pearce, J. M.

AU - Wronski, C. R.

AU - Al-Jassim, M. M.

AU - Jones, K. M.

PY - 2003

Y1 - 2003

N2 - Real time spectroscopic ellipsometry (RTSE) has been applied to develop deposition phase diagrams that describe the thickness evolution of the phase of hydrogenated silicon (Si:H) thin films. Such diagrams can be applied to establish optimization principles for the intrinsic (i-) layers incorporated into high performance solar cells based on amorphous Si:H (a-Si:H). The phase diagrams for the growth of Si:H on a-Si:H film substrates incorporate two transitions versus accumulated thickness, the first from the amorphous to the mixed-phase (amorphous + microcrystalline) growth regime [the a→(a+μc) transition] and the second from the mixed-phase to single-phase microcrystalline growth regime [the (a+μc)→μc transition]. Methods have been developed to extract the evolution of the volume fraction of microcrystalline Si:H (μc-Si:H) within the mixed-phase growth regime. Similar deposition phase diagrams have also been developed to optimize p-type Si:H layers for a-Si:H-based n-i-p and p-i-n cells.

AB - Real time spectroscopic ellipsometry (RTSE) has been applied to develop deposition phase diagrams that describe the thickness evolution of the phase of hydrogenated silicon (Si:H) thin films. Such diagrams can be applied to establish optimization principles for the intrinsic (i-) layers incorporated into high performance solar cells based on amorphous Si:H (a-Si:H). The phase diagrams for the growth of Si:H on a-Si:H film substrates incorporate two transitions versus accumulated thickness, the first from the amorphous to the mixed-phase (amorphous + microcrystalline) growth regime [the a→(a+μc) transition] and the second from the mixed-phase to single-phase microcrystalline growth regime [the (a+μc)→μc transition]. Methods have been developed to extract the evolution of the volume fraction of microcrystalline Si:H (μc-Si:H) within the mixed-phase growth regime. Similar deposition phase diagrams have also been developed to optimize p-type Si:H layers for a-Si:H-based n-i-p and p-i-n cells.

UR - http://www.scopus.com/inward/record.url?scp=6344220259&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:6344220259

SP - 2767

EP - 2772

T2 - 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3): Joint Conference of 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, and 18th European PV Solar Energy Conference

Y2 - 11 May 2003 through 18 May 2003

ER -

Collins RW, Ferreira GM, Ferlauto AS, Koval RJ, Pearce JM, Wronski CR et al.. Thickness Evolution of the Microstructure of Si:H Films in the Amorphous-to-Microcrystalline Phase Transition Region. 2003. Paper presented at 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3): Joint Conference of 13th PV Science and Engineering Conference, 30th IEEE PV Specialists Conference, and 18th European PV Solar Energy Conference, Osaka, Japan.

Thickness Evolution of the Microstructure of Si:H Films in the Amorphous-to-Microcrystalline Phase Transition Region

Abstract

Conference

NREL Publication Number

Other files and links

Fingerprint

Cite this