Abstract
The CdTe-CdS alloy system has been characterized at typical solar cell processing temperatures in order to elucidate the role of interdiffusion in CdTe/CdS-based solar cells. Predominately single phase CdTe/sub 1 -x/S/sub x/ thin films with x .ident. [S]+([S][Te]) ranging from 0 to 0.45, were grown by vacuum co-evaporation of CdS and CdTe. Phase segregation was promoted by heat treatment of thefilms at 415 deg. C in the presence of CdCl/sub 2/. The solubility limits of S in CdTe and Te in CdS at 415 deg. C were derived by measuring the compositions of the two phases in the films after the CdCl/sub 2/ treatment. The solubility limit of S in CdTe was determined to be 5.8%. Solar cells were fabricated with compositionally uniform absorber layers of CdTe/sub 1 -x/S/sub x/ with x near thesolubility limit before heat treatment. An efficiency of 10.8% was achieved by a CdTe/sub 1-x/S/sub x//CdS device. The Voc, Jsc, FF and spectral response of this device were all very similar to vacuum evaporated conventional CdTe/CdS cells where the alloy is formed by diffusion of S during cell processing.
Original language | American English |
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Pages | 773-776 |
Number of pages | 4 |
DOIs | |
State | Published - 1996 |
Event | Twenty Fifth IEEE Photovoltaic Specialists Conference - Washington, D.C. Duration: 13 May 1996 → 17 May 1996 |
Conference
Conference | Twenty Fifth IEEE Photovoltaic Specialists Conference |
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City | Washington, D.C. |
Period | 13/05/96 → 17/05/96 |
Bibliographical note
Work performed by the University of Delaware, Newark, DelawareNREL Publication Number
- NREL/CP-22399