Thin Film CIGS Photovoltaic Technology: Final Technical Report, 16 April 1998 - 15 October 2001

    Research output: NRELSubcontract Report

    Abstract

    This report describes the state-of-the-art capabilities that were demonstrated for Mo, CIGS, and ZnO depositions at coating widths of 45 cm. The CIGS is formed by linear-source evaporation onto moving substrates using multiple line sources. The linear sources were characterized according to deposition uniformity and angular dependence of emitted flux. Uniformity maps were generated for CIGScomposition and device performance over large areas. Large-area CIGS modules were produced with Voc's up to 36.9 V. High-Ga-content CIGS devices were produced in the pilot-line system with an efficiency of 11.2% (Voc 596 mV, Jsc 27.4 mA/cm2, FF 67.7%). The minimum bandgap in R&D CIGS was successfully controlled through Ga content and Ga profile. A reliable recipe was developed that yielded abest efficiency of 12.4% (Voc 532 mV, Jsc 34.3 mA/cm2, FF 67.9%). A promising source material (ZnIn2Se4) was synthesized and used for buffer layer deposition, resulting in an 11.6% cell on NREL CIGS (Voc 562 mV, Jsc 30.8 mA/cm2, FF 67.2%). Deposition rate from a charge of ZIS was recorded as a function of evaporation time and source temperature. Current generated in the CIGS component of ana-Si/a-Si/CIGS stacked device was increased from 5.6 to 12.9 mA/cm2. Useful gains in conductivity and transmission of large-area sputtered ZnO:Al were obtained through use of substrate heating. EPV is constructing an entirely new CIGS pilot line for scale up and limited manufacturing purposes. The coating width is 65 cm. The company's analytical capabilities have been upgraded with theinstallation of ICP, SEM/EDS, computerized QE, and stylus profilometer facilities.
    Original languageAmerican English
    Number of pages28
    StatePublished - 2002

    Bibliographical note

    Work performed by Energy Photovoltaics, Inc., Princeton, New Jersey

    NREL Publication Number

    • NREL/SR-520-31739

    Keywords

    • a-Si module
    • atmospheric pressure selenization
    • buffer layer deposition
    • CIGS
    • doped zinc oxide
    • electrodeposition
    • large glass substrate
    • linear source evaporation
    • Mo back electrode
    • module encapsulation
    • monolithically-integrated segments
    • PV
    • rapid thermal processing (RTP)
    • tandem junctions
    • vacuum deposition

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