Thin Film CuIn1-xGaxSe-Based Solar Cells Prepared from Solution-Based Precursors

Thin Film CuIn1-xGaxSe-Based Solar Cells Prepared from Solution-Based Precursors

Chemistry and Nanoscience

Research output: Contribution to conference › Paper

Abstract

We have fabricated high-efficiency thin-film CuIn1-xGaxSe2 (CIGS)-based photovoltaic devices from solution-based electroplated (EP) and auto-plated (AP) precursors. As-deposited precursors are Cu-rich CIGS. Compositions were adjusted to CuIn1-xGaxSe2 with additional In and Ga by physical vapor deposition (PVD) to the EP and AP precursor films. Auger analysis and grazing incident X-ray diffraction(GIXRD) were performed on devices prepared from EP and AP precursor films. We have also analyzed and compared EP, AP, and an PVD CIGS device by deep-level transient spectroscopy (DLTS).

Original language	American English
Number of pages	7
State	Published - 2000
Event	16th European PVSEC and Exhibition - Glasgow, Scotland Duration: 1 May 2000 → 5 May 2000

Conference

Conference	16th European PVSEC and Exhibition
City	Glasgow, Scotland
Period	1/05/00 → 5/05/00

NREL Publication Number

NREL/CP-590-28415

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

https://www.nrel.gov/docs/fy00osti/28415.pdf

Cite this

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title = "Thin Film CuIn1-xGaxSe-Based Solar Cells Prepared from Solution-Based Precursors",

abstract = "We have fabricated high-efficiency thin-film CuIn1-xGaxSe2 (CIGS)-based photovoltaic devices from solution-based electroplated (EP) and auto-plated (AP) precursors. As-deposited precursors are Cu-rich CIGS. Compositions were adjusted to CuIn1-xGaxSe2 with additional In and Ga by physical vapor deposition (PVD) to the EP and AP precursor films. Auger analysis and grazing incident X-ray diffraction(GIXRD) were performed on devices prepared from EP and AP precursor films. We have also analyzed and compared EP, AP, and an PVD CIGS device by deep-level transient spectroscopy (DLTS).",

author = "NREL",

year = "2000",

language = "American English",

note = "16th European PVSEC and Exhibition ; Conference date: 01-05-2000 Through 05-05-2000",

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TY - CONF

T1 - Thin Film CuIn1-xGaxSe-Based Solar Cells Prepared from Solution-Based Precursors

AU - NREL, null

PY - 2000

Y1 - 2000

N2 - We have fabricated high-efficiency thin-film CuIn1-xGaxSe2 (CIGS)-based photovoltaic devices from solution-based electroplated (EP) and auto-plated (AP) precursors. As-deposited precursors are Cu-rich CIGS. Compositions were adjusted to CuIn1-xGaxSe2 with additional In and Ga by physical vapor deposition (PVD) to the EP and AP precursor films. Auger analysis and grazing incident X-ray diffraction(GIXRD) were performed on devices prepared from EP and AP precursor films. We have also analyzed and compared EP, AP, and an PVD CIGS device by deep-level transient spectroscopy (DLTS).

AB - We have fabricated high-efficiency thin-film CuIn1-xGaxSe2 (CIGS)-based photovoltaic devices from solution-based electroplated (EP) and auto-plated (AP) precursors. As-deposited precursors are Cu-rich CIGS. Compositions were adjusted to CuIn1-xGaxSe2 with additional In and Ga by physical vapor deposition (PVD) to the EP and AP precursor films. Auger analysis and grazing incident X-ray diffraction(GIXRD) were performed on devices prepared from EP and AP precursor films. We have also analyzed and compared EP, AP, and an PVD CIGS device by deep-level transient spectroscopy (DLTS).

M3 - Paper

T2 - 16th European PVSEC and Exhibition

Y2 - 1 May 2000 through 5 May 2000

ER -

Thin Film CuIn1-xGaxSe-Based Solar Cells Prepared from Solution-Based Precursors

Abstract

Conference

NREL Publication Number

UN SDGs

Access to Document

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Cite this