Thin Film Growth of Transparent p-Type CuAlO2

R. E. Stauber, J. D. Perkins, P. A. Parilla, D. S. Ginley

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81 Scopus Citations

Abstract

Recent results suggest that CuAlO2 may be a p-type transparent conductor, but thin film synthesis is difficult because of the complex Cu:Al:O phase diagram. We report a robust method of making c-axis oriented CuAlO2 thin films. Thin film precursors of CuAlO2 were deposited on sapphire (001) substrates by radio-frequency sputtering and by pulsed-laser deposition. Subsequent annealing in air at 1050 °C in a closed crucible containing Al2O3 and CuO powders yielded nearly phase-pure, biaxially textured CuAlO2. The films were p-type and transparent with a gap of 3.5 eV.

Original languageAmerican English
Pages (from-to)654-656
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume2
Issue number12
DOIs
StatePublished - 1999

NREL Publication Number

  • NREL/JA-520-27900

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