Thin Film Growth of Transparent p-Type CuAlO2

R. E. Stauber; J. D. Perkins; P. A. Parilla; D. S. Ginley

doi:10.1149/1.1390938

Thin Film Growth of Transparent p-Type CuAlO2

R. E. Stauber, J. D. Perkins, P. A. Parilla, D. S. Ginley

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Abstract

Recent results suggest that CuAlO₂ may be a p-type transparent conductor, but thin film synthesis is difficult because of the complex Cu:Al:O phase diagram. We report a robust method of making c-axis oriented CuAlO₂ thin films. Thin film precursors of CuAlO₂ were deposited on sapphire (001) substrates by radio-frequency sputtering and by pulsed-laser deposition. Subsequent annealing in air at 1050 °C in a closed crucible containing Al₂O₃ and CuO powders yielded nearly phase-pure, biaxially textured CuAlO₂. The films were p-type and transparent with a gap of 3.5 eV.

Original language	American English
Pages (from-to)	654-656
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	2
Issue number	12
DOIs	https://doi.org/10.1149/1.1390938 https://doi.org/10.1149/1.1390938
State	Published - 1999

NREL Publication Number

NREL/JA-520-27900

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@article{872bbdd76d23401598f7cd8f756ab17c,

title = "Thin Film Growth of Transparent p-Type CuAlO2",

abstract = "Recent results suggest that CuAlO2 may be a p-type transparent conductor, but thin film synthesis is difficult because of the complex Cu:Al:O phase diagram. We report a robust method of making c-axis oriented CuAlO2 thin films. Thin film precursors of CuAlO2 were deposited on sapphire (001) substrates by radio-frequency sputtering and by pulsed-laser deposition. Subsequent annealing in air at 1050 °C in a closed crucible containing Al2O3 and CuO powders yielded nearly phase-pure, biaxially textured CuAlO2. The films were p-type and transparent with a gap of 3.5 eV.",

author = "Stauber, {R. E.} and Perkins, {J. D.} and Parilla, {P. A.} and Ginley, {D. S.}",

year = "1999",

doi = "10.1149/1.1390938",

language = "American English",

volume = "2",

pages = "654--656",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "12",

}

TY - JOUR

T1 - Thin Film Growth of Transparent p-Type CuAlO2

AU - Stauber, R. E.

AU - Perkins, J. D.

AU - Parilla, P. A.

AU - Ginley, D. S.

PY - 1999

Y1 - 1999

N2 - Recent results suggest that CuAlO2 may be a p-type transparent conductor, but thin film synthesis is difficult because of the complex Cu:Al:O phase diagram. We report a robust method of making c-axis oriented CuAlO2 thin films. Thin film precursors of CuAlO2 were deposited on sapphire (001) substrates by radio-frequency sputtering and by pulsed-laser deposition. Subsequent annealing in air at 1050 °C in a closed crucible containing Al2O3 and CuO powders yielded nearly phase-pure, biaxially textured CuAlO2. The films were p-type and transparent with a gap of 3.5 eV.

AB - Recent results suggest that CuAlO2 may be a p-type transparent conductor, but thin film synthesis is difficult because of the complex Cu:Al:O phase diagram. We report a robust method of making c-axis oriented CuAlO2 thin films. Thin film precursors of CuAlO2 were deposited on sapphire (001) substrates by radio-frequency sputtering and by pulsed-laser deposition. Subsequent annealing in air at 1050 °C in a closed crucible containing Al2O3 and CuO powders yielded nearly phase-pure, biaxially textured CuAlO2. The films were p-type and transparent with a gap of 3.5 eV.

UR - http://www.scopus.com/inward/record.url?scp=0033283418&partnerID=8YFLogxK

U2 - 10.1149/1.1390938

DO - 10.1149/1.1390938

M3 - Article

AN - SCOPUS:0033283418

SN - 1099-0062

VL - 2

SP - 654

EP - 656

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 12

ER -

Thin Film Growth of Transparent p-Type CuAlO2

Abstract

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