Thin-Film Indium Oxide Doped with Refractory Metals

Yuki Yoshida, Chollada Warmsingh, Timothy A. Gessert, John D. Parkins, David S. Ginley, Timothy J. Coutts

Research output: Contribution to conferencePaperpeer-review

5 Scopus Citations


The electrical and structural properties of sputtered indium oxide (In 2O3) thin films doped with Mo, Zr, and Ti were studied. Properties of these films are compared to undoped In2O3 and tin-doped In2O3 (ITO). The as-sputtered films, doped with Mo (IO:Mo), exhibited high mobility (45 cm2 V-1 s-1). Pulsed laser deposition (PLD) was also used to deposit IO:Mo films. The highest mobility achieved for an as-deposited PLD IO:Mo film deposited onto a glass substrate was 42.7 cm2V-1s -1. However, PLD IO:Mo films deposited on single-crystal yttria-stabilized zirconia (YSZ) substrates exhibited a higher mobility of 53.6 cm2V-1s-1 and a greater degree of structural orientation than the sputtered films. Following post-deposition annealing, both the sputtered films on glass, and the PLD films on YSZ, exhibited improved mobilities of 47 and 66 cm2V-1s-1, respectively.

Original languageAmerican English
Number of pages6
StatePublished - 2003
EventCrystalline Oxide-Silicon Heterostructures and Oxide Optoelectronics - Boston, MA, United States
Duration: 2 Dec 20024 Dec 2002


ConferenceCrystalline Oxide-Silicon Heterostructures and Oxide Optoelectronics
Country/TerritoryUnited States
CityBoston, MA

NREL Publication Number

  • NREL/CP-520-33172


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