@misc{984318abb5094072a1fb911d8233a43f,
title = "Thin-Film Module Reverse-Bias Breakdown Sites Identified by Thermal Imaging",
abstract = "Thin-film module sections are stressed under reverse bias to simulate partial shading conditions. Such stresses can cause permanent damage in the form of 'wormlike' defects due to thermal runaway. When large reverse biases with limited current are applied to the cells, dark lock-in thermography (DLIT) can detect where spatially-localized breakdown initiates before thermal runaway leads to permanent damage. Predicted breakdown defect sites have been identified in both CIGS and CdTe modules using DLIT. These defects include small pinholes, craters, or voids in the absorber layer of the film that lead to built-in areas of weakness where high current densities may cause thermal damage in a partial-shading event.",
keywords = "accelerated aging, breakdown voltage, electroluminescence, II-VI semiconductor materials, imaging, photoluminescence, photovoltaic cells, reliability, thermal analysis",
author = "Steven Johnston and Dana Kern and Harvey Guthrey and Lorelle Mansfield and Timothy Silverman and Mowafak Al-Jassim and Elizabeth Palmiotti and Andreas Gerber and Angus Rockett and Jun Liu",
year = "2018",
language = "American English",
series = "Presented at the 2018 World Conference on Photovoltaic Energy Conversion (WCPEC-7), 10-15 June 2018, Waikoloa, Hawaii",
type = "Other",
}