Thin-Film Module Reverse-Bias Breakdown Sites Identified by Thermal Imaging

Steven Johnston, Dana Kern, Harvey Guthrey, Lorelle Mansfield, Timothy Silverman, Mowafak Al-Jassim, Elizabeth Palmiotti, Andreas Gerber, Angus Rockett, Jun Liu

Research output: Contribution to conferencePaperpeer-review

12 Scopus Citations

Abstract

Thin-film module sections are stressed under reverse bias to simulate partial shading conditions. Such stresses can cause permanent damage in the form of 'wormlike' defects due to thermal runaway. When large reverse biases with limited current are applied to the cells, dark lock-in thermography (DLIT) can detect where spatially-localized breakdown initiates before thermal runaway leads to permanent damage. Predicted breakdown defect sites have been identified in both CIGS and CdTe modules using DLIT. These defects include small pinholes, craters, or voids in the absorber layer of the film that lead to builtin areas of weakness where high current densities may cause thermal damage in a partial-shading event.

Original languageAmerican English
Pages1897-1901
Number of pages5
DOIs
StatePublished - 26 Nov 2018
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: 10 Jun 201815 Jun 2018

Conference

Conference7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/TerritoryUnited States
CityWaikoloa Village
Period10/06/1815/06/18

Bibliographical note

See NREL/CP-5K00-70866 for preprint

NREL Publication Number

  • NREL/CP-5K00-73714

Keywords

  • Accelerated aging
  • breakdown voltage
  • electroluminescence
  • II-VI semiconductor materials
  • imaging
  • photoluminescence
  • photovoltaic cells
  • reliability
  • thermal analysis

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