Thin Film Si Bottom Cells for Tandem Device Structures: Final Technical Report, 15 December 2003 - 15 October 2007

Thin Film Si Bottom Cells for Tandem Device Structures: Final Technical Report, 15 December 2003 - 15 October 2007

Research output: NREL › Subcontract Report

Abstract

GIT and IEC developed thin-film Si bottom cell and showed that deposition of top cell in tandem device did not reduce bottom cell performance.

Original language	American English
Number of pages	34
State	Published - 2008

Bibliographical note

Work performed by Georgia Institute of Technology, Atlanta, Georgia and University of Delaware, Newark, Delaware

NREL Publication Number

NREL/SR-520-44380

Keywords

bottom cell
device fabrication
high-efficiency
hot-wire chemical vapor deposition (HWCVD)
PV
short circuit current (ISC)
silicon
solar cells
tandem devices
thin film

Access to Document

https://www.nrel.gov/docs/fy09osti/44380.pdf

Cite this

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title = "Thin Film Si Bottom Cells for Tandem Device Structures: Final Technical Report, 15 December 2003 - 15 October 2007",

abstract = "GIT and IEC developed thin-film Si bottom cell and showed that deposition of top cell in tandem device did not reduce bottom cell performance.",

keywords = "bottom cell, device fabrication, high-efficiency, hot-wire chemical vapor deposition (HWCVD), PV, short circuit current (ISC), silicon, solar cells, tandem devices, thin film",

author = "NREL",

note = "Work performed by Georgia Institute of Technology, Atlanta, Georgia and University of Delaware, Newark, Delaware",

year = "2008",

language = "American English",

type = "Other",

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TY - GEN

T1 - Thin Film Si Bottom Cells for Tandem Device Structures: Final Technical Report, 15 December 2003 - 15 October 2007

AU - NREL, null

N1 - Work performed by Georgia Institute of Technology, Atlanta, Georgia and University of Delaware, Newark, Delaware

PY - 2008

Y1 - 2008

N2 - GIT and IEC developed thin-film Si bottom cell and showed that deposition of top cell in tandem device did not reduce bottom cell performance.

AB - GIT and IEC developed thin-film Si bottom cell and showed that deposition of top cell in tandem device did not reduce bottom cell performance.

KW - bottom cell

KW - device fabrication

KW - high-efficiency

KW - hot-wire chemical vapor deposition (HWCVD)

KW - PV

KW - short circuit current (ISC)

KW - silicon

KW - solar cells

KW - tandem devices

KW - thin film

M3 - Subcontract Report

ER -

Thin Film Si Bottom Cells for Tandem Device Structures: Final Technical Report, 15 December 2003 - 15 October 2007

Abstract

Bibliographical note

NREL Publication Number

Keywords

Access to Document

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Cite this