Abstract
Thin polycrystalline silicon films with grain sizes between 10 to 50 nm and having (220) preferred orientation were deposited from pure silane onto 7059 Corning glass and crystalline silicon substrates by Hot-Wire Chemical Vapor Deposition (HWCVD). The effect of processing parameters, such as substrate temperature, silane flowrate and pressure, on the film properties, crystalline fraction andgrowth rate was investigated. The crystalline fraction was found to depend on the gas phase chemistry and substrate temperature at wire temperatures above 1815 deg. C.
Original language | American English |
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Pages | 152-155 |
Number of pages | 4 |
State | Published - 1999 |
Event | Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes - Breckenridge, Colorado Duration: 9 Aug 1999 → 11 Aug 1999 |
Conference
Conference | Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes |
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City | Breckenridge, Colorado |
Period | 9/08/99 → 11/08/99 |
Bibliographical note
Work performed by University of Delaware, Newark, DelawareNREL Publication Number
- NREL/CP-27190