Thin Polycrystalline Silicon Films by HWCVD

    Research output: Contribution to conferencePaper


    Thin polycrystalline silicon films with grain sizes between 10 to 50 nm and having (220) preferred orientation were deposited from pure silane onto 7059 Corning glass and crystalline silicon substrates by Hot-Wire Chemical Vapor Deposition (HWCVD). The effect of processing parameters, such as substrate temperature, silane flowrate and pressure, on the film properties, crystalline fraction andgrowth rate was investigated. The crystalline fraction was found to depend on the gas phase chemistry and substrate temperature at wire temperatures above 1815 deg. C.
    Original languageAmerican English
    Number of pages4
    StatePublished - 1999
    EventNinth Workshop on Crystalline Silicon Solar Cell Materials and Processes - Breckenridge, Colorado
    Duration: 9 Aug 199911 Aug 1999


    ConferenceNinth Workshop on Crystalline Silicon Solar Cell Materials and Processes
    CityBreckenridge, Colorado

    Bibliographical note

    Work performed by University of Delaware, Newark, Delaware

    NREL Publication Number

    • NREL/CP-27190


    Dive into the research topics of 'Thin Polycrystalline Silicon Films by HWCVD'. Together they form a unique fingerprint.

    Cite this