Three-Dimensional Assemblies of Semiconductor Quantum Dots in a Wide-Gap Matrix Providing an Intermediate Band for Absorption: Article No. 114320

doi:10.1063/1.4767377

Three-Dimensional Assemblies of Semiconductor Quantum Dots in a Wide-Gap Matrix Providing an Intermediate Band for Absorption: Article No. 114320

Chemistry and Nanoscience

Research output: Contribution to journal › Article › peer-review

Original language	American English
Number of pages	10
Journal	Journal of Applied Physics
Volume	112
Issue number	11
DOIs	https://doi.org/10.1063/1.4767377
State	Published - 2012

NREL Publication Number

NREL/JA-5900-55785

Access to Document

10.1063/1.4767377

Cite this

@article{ee3f89c6975746daab325d1de129fe9e,

title = "Three-Dimensional Assemblies of Semiconductor Quantum Dots in a Wide-Gap Matrix Providing an Intermediate Band for Absorption: Article No. 114320",

author = "NREL",

year = "2012",

doi = "10.1063/1.4767377",

language = "American English",

volume = "112",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}