Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon

P. Stradins; H. M. Branz; W. B. Jackson; R. S. Crandall; J. Hu; Q. Wang

doi:10.1557/proc-808-a10.10

Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon

P. Stradins, H. M. Branz, W. B. Jackson, R. S. Crandall, J. Hu, Q. Wang

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

Electrical switching due to metallic filament formation in hydrogenated amorphous silicon (a-Si:H) is studied in metal/a-Si:H/metal structures. We examine the effects of a-Si:H switch layer thickness, applied voltage and polarity, metal contact material, and contact interface properties. For switching, the voltage applied to the contacts must be large enough to establish: 1) a minimum threshold voltage of about 2V at the contacts and 2) a bias field of about 1 MV/cm in the bulk. Changing contact material and polarity strongly affects the switching behavior.

Original language	American English
Pages	465-470
Number of pages	6
DOIs	https://doi.org/10.1557/proc-808-a10.10
State	Published - 2004
Event	Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium - San Francisco, California Duration: 13 Apr 2004 → 16 Apr 2004

Conference

Conference	Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium
City	San Francisco, California
Period	13/04/04 → 16/04/04

NREL Publication Number

NREL/CP-520-37517

Access to Document

10.1557/proc-808-a10.10

Cite this

Stradins, P., Branz, H. M., Jackson, W. B., Crandall, R. S., Hu, J., & Wang, Q. (2004). Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon. 465-470. Paper presented at Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium, San Francisco, California. https://doi.org/10.1557/proc-808-a10.10

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title = "Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon",

abstract = "Electrical switching due to metallic filament formation in hydrogenated amorphous silicon (a-Si:H) is studied in metal/a-Si:H/metal structures. We examine the effects of a-Si:H switch layer thickness, applied voltage and polarity, metal contact material, and contact interface properties. For switching, the voltage applied to the contacts must be large enough to establish: 1) a minimum threshold voltage of about 2V at the contacts and 2) a bias field of about 1 MV/cm in the bulk. Changing contact material and polarity strongly affects the switching behavior.",

author = "P. Stradins and Branz, {H. M.} and Jackson, {W. B.} and Crandall, {R. S.} and J. Hu and Q. Wang",

year = "2004",

doi = "10.1557/proc-808-a10.10",

language = "American English",

pages = "465--470",

note = "Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium ; Conference date: 13-04-2004 Through 16-04-2004",

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Stradins, P, Branz, HM, Jackson, WB, Crandall, RS, Hu, J & Wang, Q 2004, 'Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon', Paper presented at Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium, San Francisco, California, 13/04/04 - 16/04/04 pp. 465-470. https://doi.org/10.1557/proc-808-a10.10

Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon. / Stradins, P.; Branz, H. M.; Jackson, W. B. et al.
2004. 465-470 Paper presented at Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium, San Francisco, California.

Research output: Contribution to conference › Paper › peer-review

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AU - Stradins, P.

AU - Branz, H. M.

AU - Jackson, W. B.

AU - Crandall, R. S.

AU - Hu, J.

AU - Wang, Q.

PY - 2004

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AB - Electrical switching due to metallic filament formation in hydrogenated amorphous silicon (a-Si:H) is studied in metal/a-Si:H/metal structures. We examine the effects of a-Si:H switch layer thickness, applied voltage and polarity, metal contact material, and contact interface properties. For switching, the voltage applied to the contacts must be large enough to establish: 1) a minimum threshold voltage of about 2V at the contacts and 2) a bias field of about 1 MV/cm in the bulk. Changing contact material and polarity strongly affects the switching behavior.

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Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon

Abstract

Conference

NREL Publication Number

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