Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon

P. Stradins; H. M. Branz; W. B. Jackson; R. S. Crandall; J. Hu; Q. Wang

doi:10.1557/proc-808-a10.10

Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon

P. Stradins
, H. M. Branz
, W. B. Jackson
, R. S. Crandall
, J. Hu
, Q. Wang

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

Electrical switching due to metallic filament formation in hydrogenated amorphous silicon (a-Si:H) is studied in metal/a-Si:H/metal structures. We examine the effects of a-Si:H switch layer thickness, applied voltage and polarity, metal contact material, and contact interface properties. For switching, the voltage applied to the contacts must be large enough to establish: 1) a minimum threshold voltage of about 2V at the contacts and 2) a bias field of about 1 MV/cm in the bulk. Changing contact material and polarity strongly affects the switching behavior.

Original language	American English
Pages	465-470
Number of pages	6
DOIs	https://doi.org/10.1557/proc-808-a10.10
State	Published - 2004
Event	Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium - San Francisco, California Duration: 13 Apr 2004 → 16 Apr 2004

Conference

Conference	Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium
City	San Francisco, California
Period	13/04/04 → 16/04/04

NLR Publication Number

NREL/CP-520-37517

Access to Document

10.1557/proc-808-a10.10

Cite this

Stradins, P., Branz, H. M., Jackson, W. B., Crandall, R. S., Hu, J., & Wang, Q. (2004). Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon. 465-470. Paper presented at Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium, San Francisco, California. https://doi.org/10.1557/proc-808-a10.10

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title = "Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon",

abstract = "Electrical switching due to metallic filament formation in hydrogenated amorphous silicon (a-Si:H) is studied in metal/a-Si:H/metal structures. We examine the effects of a-Si:H switch layer thickness, applied voltage and polarity, metal contact material, and contact interface properties. For switching, the voltage applied to the contacts must be large enough to establish: 1) a minimum threshold voltage of about 2V at the contacts and 2) a bias field of about 1 MV/cm in the bulk. Changing contact material and polarity strongly affects the switching behavior.",

author = "P. Stradins and Branz, \{H. M.\} and Jackson, \{W. B.\} and Crandall, \{R. S.\} and J. Hu and Q. Wang",

year = "2004",

doi = "10.1557/proc-808-a10.10",

language = "American English",

pages = "465--470",

note = "Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium ; Conference date: 13-04-2004 Through 16-04-2004",

}

Stradins, P, Branz, HM, Jackson, WB, Crandall, RS, Hu, J & Wang, Q 2004, 'Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon', Paper presented at Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium, San Francisco, California, 13/04/04 - 16/04/04 pp. 465-470. https://doi.org/10.1557/proc-808-a10.10

Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon. / Stradins, P.; Branz, H. M.; Jackson, W. B. et al.
2004. 465-470 Paper presented at Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium, San Francisco, California.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon

AU - Stradins, P.

AU - Branz, H. M.

AU - Jackson, W. B.

AU - Crandall, R. S.

AU - Hu, J.

AU - Wang, Q.

PY - 2004

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N2 - Electrical switching due to metallic filament formation in hydrogenated amorphous silicon (a-Si:H) is studied in metal/a-Si:H/metal structures. We examine the effects of a-Si:H switch layer thickness, applied voltage and polarity, metal contact material, and contact interface properties. For switching, the voltage applied to the contacts must be large enough to establish: 1) a minimum threshold voltage of about 2V at the contacts and 2) a bias field of about 1 MV/cm in the bulk. Changing contact material and polarity strongly affects the switching behavior.

AB - Electrical switching due to metallic filament formation in hydrogenated amorphous silicon (a-Si:H) is studied in metal/a-Si:H/metal structures. We examine the effects of a-Si:H switch layer thickness, applied voltage and polarity, metal contact material, and contact interface properties. For switching, the voltage applied to the contacts must be large enough to establish: 1) a minimum threshold voltage of about 2V at the contacts and 2) a bias field of about 1 MV/cm in the bulk. Changing contact material and polarity strongly affects the switching behavior.

UR - https://www.scopus.com/pages/publications/12744277380

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DO - 10.1557/proc-808-a10.10

M3 - Paper

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T2 - Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium

Y2 - 13 April 2004 through 16 April 2004

ER -

Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon

Abstract

Conference

NLR Publication Number

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