Time Dependence of the ESR of Localized Electronic States in a-Si:H at 300 K

Time Dependence of the ESR of Localized Electronic States in a-Si:H at 300 K

Research output: Contribution to conference › Paper

Original language	American English
Pages	193-198
Number of pages	6
State	Published - 1987
Event	International Conference on Stability of Amorphous Silicon Alloy Materials and Devices - Palo Alto, California Duration: 28 Jan 1987 → 30 Jan 1987

Conference

Conference	International Conference on Stability of Amorphous Silicon Alloy Materials and Devices
City	Palo Alto, California
Period	28/01/87 → 30/01/87

Bibliographical note

Work performed by Department of Physics, University of Utah, Salt Lake City, Utah

NREL Publication Number

ACNR/CP-8726

Cite this

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title = "Time Dependence of the ESR of Localized Electronic States in a-Si:H at 300 K",

author = "NREL",

note = "Work performed by Department of Physics, University of Utah, Salt Lake City, Utah; International Conference on Stability of Amorphous Silicon Alloy Materials and Devices ; Conference date: 28-01-1987 Through 30-01-1987",

year = "1987",

language = "American English",

pages = "193--198",

}

TY - CONF

T1 - Time Dependence of the ESR of Localized Electronic States in a-Si:H at 300 K

AU - NREL, null

N1 - Work performed by Department of Physics, University of Utah, Salt Lake City, Utah

PY - 1987

Y1 - 1987

M3 - Paper

SP - 193

EP - 198

T2 - International Conference on Stability of Amorphous Silicon Alloy Materials and Devices

Y2 - 28 January 1987 through 30 January 1987

ER -