Time-of-Flight Studies of Minority-Carrier Diffusion in AlxGa1-xAs Homojunctions

R. K. Ahrenkiel; D. J. Dunlavy; H. C. Hamaker; R. T. Green; C. R. Lewis; R. E. Hayes; H. Fardi

doi:10.1063/1.97580

Time-of-Flight Studies of Minority-Carrier Diffusion in AlxGa1-xAs Homojunctions

R. K. Ahrenkiel, D. J. Dunlavy, H. C. Hamaker, R. T. Green, C. R. Lewis, R. E. Hayes, H. Fardi

Materials Science

Research output: Contribution to journal › Article › peer-review

19 Scopus Citations

Abstract

A novel time-of-flight technique has been developed for simultaneously measuring minority-carrier lifetime and diffusivity in homojunctions. A pulsed dye laser produces electron-hole pairs near the front surface of the device. A delay occurs before the onset of photocurrent due to the diffusion transit time of minority carriers to the junction. An analysis of this effect by both a simplified analytical model and a computer simulation gives similar results for the current as a function of time. A fit of the theory to experimental data on Al_0.25Ga_0.75As n/p homojunctions produces minority-carrier lifetime, diffusivity, and diffusion length.

Original language	American English
Pages (from-to)	725-727
Number of pages	3
Journal	Applied Physics Letters
Volume	49
Issue number	12
DOIs	https://doi.org/10.1063/1.97580 https://doi.org/10.1063/1.97580
State	Published - 1986

NREL Publication Number

ACNR/JA-213-7141

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title = "Time-of-Flight Studies of Minority-Carrier Diffusion in AlxGa1-xAs Homojunctions",

abstract = "A novel time-of-flight technique has been developed for simultaneously measuring minority-carrier lifetime and diffusivity in homojunctions. A pulsed dye laser produces electron-hole pairs near the front surface of the device. A delay occurs before the onset of photocurrent due to the diffusion transit time of minority carriers to the junction. An analysis of this effect by both a simplified analytical model and a computer simulation gives similar results for the current as a function of time. A fit of the theory to experimental data on Al0.25Ga0.75As n/p homojunctions produces minority-carrier lifetime, diffusivity, and diffusion length.",

author = "Ahrenkiel, {R. K.} and Dunlavy, {D. J.} and Hamaker, {H. C.} and Green, {R. T.} and Lewis, {C. R.} and Hayes, {R. E.} and H. Fardi",

year = "1986",

doi = "10.1063/1.97580",

language = "American English",

volume = "49",

pages = "725--727",

journal = "Applied Physics Letters",

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AU - Ahrenkiel, R. K.

AU - Dunlavy, D. J.

AU - Hamaker, H. C.

AU - Green, R. T.

AU - Lewis, C. R.

AU - Hayes, R. E.

AU - Fardi, H.

PY - 1986

Y1 - 1986

N2 - A novel time-of-flight technique has been developed for simultaneously measuring minority-carrier lifetime and diffusivity in homojunctions. A pulsed dye laser produces electron-hole pairs near the front surface of the device. A delay occurs before the onset of photocurrent due to the diffusion transit time of minority carriers to the junction. An analysis of this effect by both a simplified analytical model and a computer simulation gives similar results for the current as a function of time. A fit of the theory to experimental data on Al0.25Ga0.75As n/p homojunctions produces minority-carrier lifetime, diffusivity, and diffusion length.

AB - A novel time-of-flight technique has been developed for simultaneously measuring minority-carrier lifetime and diffusivity in homojunctions. A pulsed dye laser produces electron-hole pairs near the front surface of the device. A delay occurs before the onset of photocurrent due to the diffusion transit time of minority carriers to the junction. An analysis of this effect by both a simplified analytical model and a computer simulation gives similar results for the current as a function of time. A fit of the theory to experimental data on Al0.25Ga0.75As n/p homojunctions produces minority-carrier lifetime, diffusivity, and diffusion length.

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M3 - Article

AN - SCOPUS:0343722761

SN - 0003-6951

VL - 49

SP - 725

EP - 727

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Time-of-Flight Studies of Minority-Carrier Diffusion in AlxGa1-xAs Homojunctions

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