Time-Resolved Photoluminescence Studies on Transferred Thin Film InP Epilayers

G. Augustine; B. M. Keyes; N. M. Jokerst; A. Rohatgi; R. K. Ahrenkiel

doi:10.1109/ICIPRM.1993.380614

Time-Resolved Photoluminescence Studies on Transferred Thin Film InP Epilayers

G. Augustine, B. M. Keyes, N. M. Jokerst, A. Rohatgi, R. K. Ahrenkiel

Georgia Institute of Technology

Research output: Contribution to conference › Paper › peer-review

4 Scopus Citations

Abstract

Time-resolved photoluminescence (TRPL) data are reported for the first time on InP thin films transferred on glass substrates. The films were kept below 1.1 μm in thickness to reduce the photon recycling effect. The data were taken by means of the time-correlated single photon counting technique. The thin films were grown by the liquid phase epitaxial process. The lower doped n-type samples showed evidence of Shockley-Read-Hall (SRH) recombination. For higher electron densities, the lifetime is found to be controlled by the radiative recombination process and an estimate of the B coefficient was made in terms of the photon recycling factor.

Original language	American English
Pages	636-639
Number of pages	4
DOIs	https://doi.org/10.1109/ICIPRM.1993.380614
State	Published - 1993
Externally published	Yes
Event	1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4) - Paris, Fr Duration: 19 Apr 1993 → 22 Apr 1993

Conference

Conference	1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4)
City	Paris, Fr
Period	19/04/93 → 22/04/93

NREL Publication Number

ACNR/CP-14970

Access to Document

10.1109/ICIPRM.1993.380614

Cite this

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title = "Time-Resolved Photoluminescence Studies on Transferred Thin Film InP Epilayers",

abstract = "Time-resolved photoluminescence (TRPL) data are reported for the first time on InP thin films transferred on glass substrates. The films were kept below 1.1 μm in thickness to reduce the photon recycling effect. The data were taken by means of the time-correlated single photon counting technique. The thin films were grown by the liquid phase epitaxial process. The lower doped n-type samples showed evidence of Shockley-Read-Hall (SRH) recombination. For higher electron densities, the lifetime is found to be controlled by the radiative recombination process and an estimate of the B coefficient was made in terms of the photon recycling factor.",

author = "G. Augustine and Keyes, {B. M.} and Jokerst, {N. M.} and A. Rohatgi and Ahrenkiel, {R. K.}",

year = "1993",

doi = "10.1109/ICIPRM.1993.380614",

language = "American English",

pages = "636--639",

note = "1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4) ; Conference date: 19-04-1993 Through 22-04-1993",

}

TY - CONF

T1 - Time-Resolved Photoluminescence Studies on Transferred Thin Film InP Epilayers

AU - Augustine, G.

AU - Keyes, B. M.

AU - Jokerst, N. M.

AU - Rohatgi, A.

AU - Ahrenkiel, R. K.

PY - 1993

Y1 - 1993

N2 - Time-resolved photoluminescence (TRPL) data are reported for the first time on InP thin films transferred on glass substrates. The films were kept below 1.1 μm in thickness to reduce the photon recycling effect. The data were taken by means of the time-correlated single photon counting technique. The thin films were grown by the liquid phase epitaxial process. The lower doped n-type samples showed evidence of Shockley-Read-Hall (SRH) recombination. For higher electron densities, the lifetime is found to be controlled by the radiative recombination process and an estimate of the B coefficient was made in terms of the photon recycling factor.

AB - Time-resolved photoluminescence (TRPL) data are reported for the first time on InP thin films transferred on glass substrates. The films were kept below 1.1 μm in thickness to reduce the photon recycling effect. The data were taken by means of the time-correlated single photon counting technique. The thin films were grown by the liquid phase epitaxial process. The lower doped n-type samples showed evidence of Shockley-Read-Hall (SRH) recombination. For higher electron densities, the lifetime is found to be controlled by the radiative recombination process and an estimate of the B coefficient was made in terms of the photon recycling factor.

UR - http://www.scopus.com/inward/record.url?scp=0027150037&partnerID=8YFLogxK

U2 - 10.1109/ICIPRM.1993.380614

DO - 10.1109/ICIPRM.1993.380614

M3 - Paper

AN - SCOPUS:0027150037

SP - 636

EP - 639

T2 - 1993 IEEE International Symposium on Circuits and Systems; Part 1 (of 4)

Y2 - 19 April 1993 through 22 April 1993

ER -

Time-Resolved Photoluminescence Studies on Transferred Thin Film InP Epilayers

Abstract

Conference

NREL Publication Number

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