Time-Resolved Switching Studies in a-Si:H and Related Films

P. Stradins; W. B. Jackson; H. M. Branz; J. Hu; C. L. Perkins; Qi Wang

doi:10.1557/proc-762-a2.4

Time-Resolved Switching Studies in a-Si:H and Related Films

P. Stradins, W. B. Jackson, H. M. Branz, J. Hu, C. L. Perkins, Qi Wang

Research output: Contribution to conference › Paper › peer-review

3 Scopus Citations

Abstract

Switching in a-Si:H and a-Si:HN_x layers is investigated by pulse current transient and Auger scanning microspectroscopy measurements. Switching in a-Si:H with Ag and Cr contacts exhibits 2 different regimes depending on the voltage pulse polarity. With a positive top Ag contact, switching occurs in nanoseconds after a certain latency time, which depends on voltage exponentially. For a negative Ag contact, there is no latency time provided the voltage exceeds a certain critical value. This might be related to interface effects on contact properties or field-assisted metal diffusion. Scanning Auger element micromaps reveal metallic filaments in the switched films. They contain both Ag and Cr throughout the film thickness. Two phases of the filament formation are suggested - a precursor phase and a post-switching phase characterized by local heating and atomic diffusion. Soft and hard switching are observed in a-Si:HN_x films simultaneously and their rates depend strongly on the contact material and applied voltage. Soft switching might be related to the charge trapping in this wide bandgap material.

Original language	American English
Pages	75-80
Number of pages	6
DOIs	https://doi.org/10.1557/proc-762-a2.4
State	Published - 2003
Event	Amorphous and Nanocrystalline Silicon-Based Films 2003: Materials Research Society Symposium - San Francisco, California Duration: 22 Apr 2003 → 25 Apr 2003

Conference

Conference	Amorphous and Nanocrystalline Silicon-Based Films 2003: Materials Research Society Symposium
City	San Francisco, California
Period	22/04/03 → 25/04/03

NREL Publication Number

NREL/CP-520-36072

Access to Document

10.1557/proc-762-a2.4

Cite this

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title = "Time-Resolved Switching Studies in a-Si:H and Related Films",

abstract = "Switching in a-Si:H and a-Si:HNx layers is investigated by pulse current transient and Auger scanning microspectroscopy measurements. Switching in a-Si:H with Ag and Cr contacts exhibits 2 different regimes depending on the voltage pulse polarity. With a positive top Ag contact, switching occurs in nanoseconds after a certain latency time, which depends on voltage exponentially. For a negative Ag contact, there is no latency time provided the voltage exceeds a certain critical value. This might be related to interface effects on contact properties or field-assisted metal diffusion. Scanning Auger element micromaps reveal metallic filaments in the switched films. They contain both Ag and Cr throughout the film thickness. Two phases of the filament formation are suggested - a precursor phase and a post-switching phase characterized by local heating and atomic diffusion. Soft and hard switching are observed in a-Si:HNx films simultaneously and their rates depend strongly on the contact material and applied voltage. Soft switching might be related to the charge trapping in this wide bandgap material.",

author = "P. Stradins and Jackson, {W. B.} and Branz, {H. M.} and J. Hu and Perkins, {C. L.} and Qi Wang",

year = "2003",

doi = "10.1557/proc-762-a2.4",

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pages = "75--80",

note = "Amorphous and Nanocrystalline Silicon-Based Films 2003: Materials Research Society Symposium ; Conference date: 22-04-2003 Through 25-04-2003",

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T1 - Time-Resolved Switching Studies in a-Si:H and Related Films

AU - Stradins, P.

AU - Jackson, W. B.

AU - Branz, H. M.

AU - Hu, J.

AU - Perkins, C. L.

AU - Wang, Qi

PY - 2003

Y1 - 2003

N2 - Switching in a-Si:H and a-Si:HNx layers is investigated by pulse current transient and Auger scanning microspectroscopy measurements. Switching in a-Si:H with Ag and Cr contacts exhibits 2 different regimes depending on the voltage pulse polarity. With a positive top Ag contact, switching occurs in nanoseconds after a certain latency time, which depends on voltage exponentially. For a negative Ag contact, there is no latency time provided the voltage exceeds a certain critical value. This might be related to interface effects on contact properties or field-assisted metal diffusion. Scanning Auger element micromaps reveal metallic filaments in the switched films. They contain both Ag and Cr throughout the film thickness. Two phases of the filament formation are suggested - a precursor phase and a post-switching phase characterized by local heating and atomic diffusion. Soft and hard switching are observed in a-Si:HNx films simultaneously and their rates depend strongly on the contact material and applied voltage. Soft switching might be related to the charge trapping in this wide bandgap material.

AB - Switching in a-Si:H and a-Si:HNx layers is investigated by pulse current transient and Auger scanning microspectroscopy measurements. Switching in a-Si:H with Ag and Cr contacts exhibits 2 different regimes depending on the voltage pulse polarity. With a positive top Ag contact, switching occurs in nanoseconds after a certain latency time, which depends on voltage exponentially. For a negative Ag contact, there is no latency time provided the voltage exceeds a certain critical value. This might be related to interface effects on contact properties or field-assisted metal diffusion. Scanning Auger element micromaps reveal metallic filaments in the switched films. They contain both Ag and Cr throughout the film thickness. Two phases of the filament formation are suggested - a precursor phase and a post-switching phase characterized by local heating and atomic diffusion. Soft and hard switching are observed in a-Si:HNx films simultaneously and their rates depend strongly on the contact material and applied voltage. Soft switching might be related to the charge trapping in this wide bandgap material.

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ER -

Time-Resolved Switching Studies in a-Si:H and Related Films

Abstract

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