Titanium-doped Indium Oxide: A High-mobility Transparent Conductor

M. F.A.M. Van Hest; M. S. Dabney; J. D. Perkins; D. S. Ginley; M. P. Taylor

doi:10.1063/1.1995957

Titanium-doped Indium Oxide: A High-mobility Transparent Conductor

M. F.A.M. Van Hest, M. S. Dabney, J. D. Perkins, D. S. Ginley, M. P. Taylor

Materials, Chemical, and Computational Science

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Abstract

We report on the effects of titanium doping (0-7 at. %) on the optical and electrical properties of In2 O3 using combinatorial deposition and analysis techniques. Maximum mobilities are observed at Ti concentrations of 1.5-2.5 at. % and are >80 cm2 V s in sputtered films. The carrier concentration increased with titanium content to a high of 8.0× 1020 cm-3. Data show that one carrier is generated per added Ti between 1 and 3 at. %. Conductivities up to 6260 Ω-1 cm-1 were observed. These remained very high >5000 Ω-1 cm-1 across a wide compositional range. The optical transparency is high (>85%) in a wide spectral range from 400 nm to at least 1750 nm. The work function of titanium-doped indium oxide varies substantially over the studied compositional range.

Original language	American English
Article number	032111
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	3
DOIs	https://doi.org/10.1063/1.1995957 https://doi.org/10.1063/1.1995957
State	Published - 18 Jul 2005

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NREL/JA-520-38795

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title = "Titanium-doped Indium Oxide: A High-mobility Transparent Conductor",

abstract = "We report on the effects of titanium doping (0-7 at. %) on the optical and electrical properties of In2 O3 using combinatorial deposition and analysis techniques. Maximum mobilities are observed at Ti concentrations of 1.5-2.5 at. % and are >80 cm2 V s in sputtered films. The carrier concentration increased with titanium content to a high of 8.0× 1020 cm-3. Data show that one carrier is generated per added Ti between 1 and 3 at. %. Conductivities up to 6260 Ω-1 cm-1 were observed. These remained very high >5000 Ω-1 cm-1 across a wide compositional range. The optical transparency is high (>85%) in a wide spectral range from 400 nm to at least 1750 nm. The work function of titanium-doped indium oxide varies substantially over the studied compositional range.",

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T1 - Titanium-doped Indium Oxide: A High-mobility Transparent Conductor

AU - Van Hest, M. F.A.M.

AU - Dabney, M. S.

AU - Perkins, J. D.

AU - Ginley, D. S.

AU - Taylor, M. P.

PY - 2005/7/18

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AB - We report on the effects of titanium doping (0-7 at. %) on the optical and electrical properties of In2 O3 using combinatorial deposition and analysis techniques. Maximum mobilities are observed at Ti concentrations of 1.5-2.5 at. % and are >80 cm2 V s in sputtered films. The carrier concentration increased with titanium content to a high of 8.0× 1020 cm-3. Data show that one carrier is generated per added Ti between 1 and 3 at. %. Conductivities up to 6260 Ω-1 cm-1 were observed. These remained very high >5000 Ω-1 cm-1 across a wide compositional range. The optical transparency is high (>85%) in a wide spectral range from 400 nm to at least 1750 nm. The work function of titanium-doped indium oxide varies substantially over the studied compositional range.

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Titanium-doped Indium Oxide: A High-mobility Transparent Conductor

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