Titanium Silicide Ohmic Contacts for High Temperature S-SiC Devices: (Abstract No. 466)

Titanium Silicide Ohmic Contacts for High Temperature S-SiC Devices: (Abstract No. 466)

NREL

Research output: Contribution to conference › Paper

Original language	American English
Number of pages	680
State	Published - 1988
Event	Electrochemical Society Fall Meeting - Chicago, Illinois Duration: 9 Oct 1988 → 14 Oct 1988

Conference

Conference	Electrochemical Society Fall Meeting
City	Chicago, Illinois
Period	9/10/88 → 14/10/88

Bibliographical note

Work performed by University of Notre Dame, Notre Dame, Indiana; NASA LeRC, Cleveland, Ohio; Delco Electronics, Kokomo, Indiana; and Solar Energy Research Institute, Golden, Colorado

NLR Publication Number

ACNR/CP-213-10945

Cite this

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title = "Titanium Silicide Ohmic Contacts for High Temperature S-SiC Devices: (Abstract No. 466)",

author = "NREL",

note = "Work performed by University of Notre Dame, Notre Dame, Indiana; NASA LeRC, Cleveland, Ohio; Delco Electronics, Kokomo, Indiana; and Solar Energy Research Institute, Golden, Colorado; Electrochemical Society Fall Meeting ; Conference date: 09-10-1988 Through 14-10-1988",

year = "1988",

language = "American English",

}

TY - CONF

T1 - Titanium Silicide Ohmic Contacts for High Temperature S-SiC Devices

T2 - Electrochemical Society Fall Meeting

AU - NREL, null

N1 - Work performed by University of Notre Dame, Notre Dame, Indiana; NASA LeRC, Cleveland, Ohio; Delco Electronics, Kokomo, Indiana; and Solar Energy Research Institute, Golden, Colorado

PY - 1988

Y1 - 1988

M3 - Paper

Y2 - 9 October 1988 through 14 October 1988

ER -