Toward a Monolithic Lattice-Matched III-V on Silicon Tandem Solar Cell

John Geisz

Toward a Monolithic Lattice-Matched III-V on Silicon Tandem Solar Cell

Chemistry and Nanoscience

Research output: Contribution to conference › Paper

Abstract

A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated some of the key components toward realizing such a cell, including GaNPAs top cells grown on silicon substrates, GaP-based tunnel junctions grown on silicon substrates, and diffused siliconjunctions formed during the epitaxial growth of GaNP on silicon. These components have required the development of techniques for the growth of high crystalline quality GaNPAs on silicon by metal-organic vapor-phase epitaxy.

Original language	American English
Number of pages	7
State	Published - 2004
Event	19th European PV Solar Energy Conference and Exhibition - Paris, France Duration: 7 Jun 2004 → 11 Jun 2004

Conference

Conference	19th European PV Solar Energy Conference and Exhibition
City	Paris, France
Period	7/06/04 → 11/06/04

NREL Publication Number

NREL/CP-520-35323

Keywords

c-Si
III-V semiconductors
multijunction solar cells
PV

Access to Document

https://www.nrel.gov/docs/fy04osti/35323.pdf

Cite this

@conference{279e5db109f94060be93063b88c492d5,

title = "Toward a Monolithic Lattice-Matched III-V on Silicon Tandem Solar Cell",

abstract = "A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated some of the key components toward realizing such a cell, including GaNPAs top cells grown on silicon substrates, GaP-based tunnel junctions grown on silicon substrates, and diffused siliconjunctions formed during the epitaxial growth of GaNP on silicon. These components have required the development of techniques for the growth of high crystalline quality GaNPAs on silicon by metal-organic vapor-phase epitaxy.",

keywords = "c-Si, III-V semiconductors, multijunction solar cells, PV",

author = "John Geisz",

year = "2004",

language = "American English",

note = "19th European PV Solar Energy Conference and Exhibition ; Conference date: 07-06-2004 Through 11-06-2004",

}

TY - CONF

T1 - Toward a Monolithic Lattice-Matched III-V on Silicon Tandem Solar Cell

AU - Geisz, John

PY - 2004

Y1 - 2004

N2 - A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated some of the key components toward realizing such a cell, including GaNPAs top cells grown on silicon substrates, GaP-based tunnel junctions grown on silicon substrates, and diffused siliconjunctions formed during the epitaxial growth of GaNP on silicon. These components have required the development of techniques for the growth of high crystalline quality GaNPAs on silicon by metal-organic vapor-phase epitaxy.

AB - A two-junction device consisting of a 1.7-eV GaNPAs junction on a 1.1-eV silicon junction has the theoretical potential to achieve nearly optimal efficiency for a two-junction tandem cell. We have demonstrated some of the key components toward realizing such a cell, including GaNPAs top cells grown on silicon substrates, GaP-based tunnel junctions grown on silicon substrates, and diffused siliconjunctions formed during the epitaxial growth of GaNP on silicon. These components have required the development of techniques for the growth of high crystalline quality GaNPAs on silicon by metal-organic vapor-phase epitaxy.

KW - c-Si

KW - III-V semiconductors

KW - multijunction solar cells

KW - PV

M3 - Paper

T2 - 19th European PV Solar Energy Conference and Exhibition

Y2 - 7 June 2004 through 11 June 2004

ER -

Toward a Monolithic Lattice-Matched III-V on Silicon Tandem Solar Cell

Abstract

Conference

NREL Publication Number

Keywords

Access to Document

Fingerprint

Cite this