Abstract
A quantitative study of n-type doping in highly crystalline organic semiconductor films establishes the predominant influence of electrostatic forces in these low-dielectric materials. Based on these findings, a self-consistent model of doped (purposely or not) organic semiconductors is proposed in which: 1) the equilibrium free carrier density, nf, is a small fraction of the total chargedensity; 2) a superlinear increase in conductivity with doping density is universal; 3) nf increases with applied electric field; and 4) the carrier mobility is field-dependent regardless of crystallinity.
| Original language | American English |
|---|---|
| Number of pages | 5 |
| State | Published - 2005 |
| Event | 2004 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado Duration: 25 Oct 2004 → 28 Oct 2004 |
Conference
| Conference | 2004 DOE Solar Energy Technologies Program Review Meeting |
|---|---|
| City | Denver, Colorado |
| Period | 25/10/04 → 28/10/04 |
Bibliographical note
Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140)NREL Publication Number
- NREL/CP-590-37617
Keywords
- carrier density
- crystalline
- electron-hole pairs (excitons)
- electrostatic forces
- n-type doping
- organic semiconductor films
- PV
- wavefunction