Towards a III-V Solar Cell with a Metamorphic Graded Buffer Directly Grown on V-Groove Si Substrates

Theresa Saenz, John Mangum, Olivia Schneble, Ivan Garcia, Ryan France, William McMahon, Jeramy Zimmerman, Emily Warren

Research output: Contribution to conferencePaperpeer-review

1 Scopus Citations

Abstract

V-groove Si substrates offer a promising route for the direct growth of III-V solar cells on low-cost, photovoltaic-grade Si. In this work, we develop a method for coalescing GaP nucleated on V-groove substrates into thin films suitable for the growth of III-V solar cells. We demonstrate the ability to suppress nucleation-related defects by modifying the V-groove substrate to cover the (0 0 1)-oriented Si V-groove tops with SiNx. A threading dislocation density (TDD) of 5 × 107 cm-2 was measured with electron channeling contrast imaging. Continuing work will focus on further reducing the TDD and the growth of a GaAs solar cell on a GaP on V-groove Si template.

Original languageAmerican English
Pages1921-1924
Number of pages4
DOIs
StatePublished - 20 Jun 2021
Event48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States
Duration: 20 Jun 202125 Jun 2021

Conference

Conference48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/TerritoryUnited States
CityFort Lauderdale
Period20/06/2125/06/21

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

NREL Publication Number

  • NREL/CP-5900-79020

Keywords

  • Heteroepitaxy
  • III-V solar cells
  • low cost substrates
  • nanopatterning

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