Abstract
V-groove Si substrates offer a promising route for the direct growth of III-V solar cells on low-cost, photovoltaic-grade Si. In this work, we develop a method for coalescing GaP nucleated on V-groove substrates into thin films suitable for the growth of III-V solar cells. We demonstrate the ability to suppress nucleation-related defects by modifying the V-groove substrate to cover the (0 0 1)-oriented Si V-groove tops with SiNx. A threading dislocation density (TDD) of 5 × 107 cm-2 was measured with electron channeling contrast imaging. Continuing work will focus on further reducing the TDD and the growth of a GaAs solar cell on a GaP on V-groove Si template.
Original language | American English |
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Pages | 1921-1924 |
Number of pages | 4 |
DOIs | |
State | Published - 20 Jun 2021 |
Event | 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States Duration: 20 Jun 2021 → 25 Jun 2021 |
Conference
Conference | 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 |
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Country/Territory | United States |
City | Fort Lauderdale |
Period | 20/06/21 → 25/06/21 |
Bibliographical note
Publisher Copyright:© 2021 IEEE.
NREL Publication Number
- NREL/CP-5900-79020
Keywords
- Heteroepitaxy
- III-V solar cells
- low cost substrates
- nanopatterning