Abstract
In this work, we present recent progress towards high-efficiency epitaxial 1.7 eV/1.1 eV GaAsP/Si tandem cells. First, we present Si bottom cells with thick, epitaxial n-GaAsP optical filtering layers, yielding an efficiency of 6.25%. Furthermore, we demonstrate GaAsP/Si 2-terminal tandem cells with Voc of 1.596 V using an unoptimized tunnel junction to interconnect the GaAsP and Si sub-cells. Finally, we discuss the design of SiNx/SiOx double-layer anti-reflectance coating (ARC) for GaAsP/Si tandem cells, which boosted the Jsc by 28.9%.
Original language | American English |
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Pages | 3376-3380 |
Number of pages | 5 |
DOIs | |
State | Published - 2018 |
Event | 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C. Duration: 25 Jun 2017 → 30 Jun 2017 |
Conference
Conference | 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) |
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City | Washington, D.C. |
Period | 25/06/17 → 30/06/17 |
NREL Publication Number
- NREL/CP-5900-73950
Keywords
- back contact
- computer simulation
- photovoltaic cells
- silicon