Towards High-Efficiency GaAsP/Si Tandem Cells

S. Fan, M. Vaisman, K. Yaung, D. Martin-Martin, M. Leilaeioun, Z. Holman, M. Lee

Research output: Contribution to conferencePaper

1 Scopus Citations

Abstract

In this work, we present recent progress towards high-efficiency epitaxial 1.7 eV/1.1 eV GaAsP/Si tandem cells. First, we present Si bottom cells with thick, epitaxial n-GaAsP optical filtering layers, yielding an efficiency of 6.25%. Furthermore, we demonstrate GaAsP/Si 2-terminal tandem cells with Voc of 1.596 V using an unoptimized tunnel junction to interconnect the GaAsP and Si sub-cells. Finally, we discuss the design of SiNx/SiOx double-layer anti-reflectance coating (ARC) for GaAsP/Si tandem cells, which boosted the Jsc by 28.9%.
Original languageAmerican English
Pages3376-3380
Number of pages5
DOIs
StatePublished - 2018
Event2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) - Washington, D.C.
Duration: 25 Jun 201730 Jun 2017

Conference

Conference2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
CityWashington, D.C.
Period25/06/1730/06/17

NREL Publication Number

  • NREL/CP-5900-73950

Keywords

  • back contact
  • computer simulation
  • photovoltaic cells
  • silicon

Fingerprint

Dive into the research topics of 'Towards High-Efficiency GaAsP/Si Tandem Cells'. Together they form a unique fingerprint.

Cite this