Abstract
Transfer printing is a uniquely enabling technology for the heterogeneous integration of III-V materials grown on dissimilar substrates. In this paper, we present experimental results for a mechanically stacked tandem cell using GaAs and GaSb-based materials capable of harvesting the entire solar spectrum with 44.5% efficiency. We also present the latest results toward developing an ultra-high performance heterogeneous cell, integrating materials grown on GaAs, InP and GaSb platforms.
Original language | American English |
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Pages | 40-45 |
Number of pages | 6 |
DOIs | |
State | Published - 18 Nov 2016 |
Event | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016 |
Conference
Conference | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 |
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Country/Territory | United States |
City | Portland |
Period | 5/06/16 → 10/06/16 |
Bibliographical note
Publisher Copyright:© 2016 IEEE.
NREL Publication Number
- NREL/CP-5J00-67952
Keywords
- computer architecture
- gallium arsenide
- III-V semiconductor materials
- indium phosphide
- junctions
- photonic band gap
- photovoltaic cells