Transient Photoconductivity Studies of the Light Soaked State of Hydrogenated Amorphous Silicon

Research output: Contribution to journal › Article

Work performed by Xerox Palo Alto Research Center, Palo Alto, California

NREL Publication Number

@article{f83e4ffa62564d4a877cf5e9d4303445,

title = "Transient Photoconductivity Studies of the Light Soaked State of Hydrogenated Amorphous Silicon",

author = "NREL",

note = "Work performed by Xerox Palo Alto Research Center, Palo Alto, California",

year = "1983",

doi = "10.1063/1.93984",

language = "American English",

volume = "42",

pages = "507--509",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Transient Photoconductivity Studies of the Light Soaked State of Hydrogenated Amorphous Silicon

AU - NREL, null

N1 - Work performed by Xerox Palo Alto Research Center, Palo Alto, California

PY - 1983

Y1 - 1983

U2 - 10.1063/1.93984

DO - 10.1063/1.93984

M3 - Article

SN - 0003-6951

VL - 42

SP - 507

EP - 509

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -