Transient Photocurrent Characterization of Amorphous Semiconductors

Transient Photocurrent Characterization of Amorphous Semiconductors

Research output: Contribution to conference › Paper

Original language	American English
Pages	39-46
Number of pages	8
State	Published - 1987
Event	Physics of Amorphous Semiconductor Devices - Los Angeles, California Duration: 15 Jan 1987 → 16 Jan 1987

Conference

Conference	Physics of Amorphous Semiconductor Devices
City	Los Angeles, California
Period	15/01/87 → 16/01/87

Bibliographical note

Work performed by Department of Physics, Syracuse University, Syracuse, New York

NREL Publication Number

ACNR/CP-9535

Cite this

@conference{335e5d5124e14cb59f7f125efe2a15a6,

title = "Transient Photocurrent Characterization of Amorphous Semiconductors",

author = "NREL",

note = "Work performed by Department of Physics, Syracuse University, Syracuse, New York; Physics of Amorphous Semiconductor Devices ; Conference date: 15-01-1987 Through 16-01-1987",

year = "1987",

language = "American English",

pages = "39--46",

}