Transmission Electron Microscopy Study of the Effect of Selenium Doping on the Ordering of GaInP2

J. P. Goral; Sarah R. Kurtz; J. M. Olson; A. Kibbler

doi:10.1007/BF02655555

Transmission Electron Microscopy Study of the Effect of Selenium Doping on the Ordering of GaInP2

J. P. Goral, Sarah R. Kurtz, J. M. Olson, A. Kibbler

Materials Science

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

25 Scopus Citations

Abstract

Selenium doped Ga_0.51In_0.49P films have been grown by metalorganic chemical vapour deposition at 600, 670 and 740° C. The extent of ordering of the Group III sublattice has been monitored by transmission electron microscopy. Ordering disappears at carrier concentrations on the order of 10¹⁸ cm^-3 for samples grown at 600 and 740° C although a small degree of ordering persists in the samples grown at 670° C up to a carrier concentration of 10¹⁹ cm^-3. At each growth temperature, the ordering observed decreased and the bandgap measured increased with increasing Se doping.

Original language	American English
Pages (from-to)	95-99
Number of pages	5
Journal	Journal of Electronic Materials
Volume	19
Issue number	1
DOIs	https://doi.org/10.1007/BF02655555 https://doi.org/10.1007/BF02655555
State	Published - Jan 1990

NREL Publication Number

ACNR/JA-213-11545

Keywords

GaInP
MOCVD
ordering

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title = "Transmission Electron Microscopy Study of the Effect of Selenium Doping on the Ordering of GaInP2",

abstract = "Selenium doped Ga0.51In0.49P films have been grown by metalorganic chemical vapour deposition at 600, 670 and 740° C. The extent of ordering of the Group III sublattice has been monitored by transmission electron microscopy. Ordering disappears at carrier concentrations on the order of 1018 cm-3 for samples grown at 600 and 740° C although a small degree of ordering persists in the samples grown at 670° C up to a carrier concentration of 1019 cm-3. At each growth temperature, the ordering observed decreased and the bandgap measured increased with increasing Se doping.",

keywords = "GaInP, MOCVD, ordering",

author = "Goral, {J. P.} and Kurtz, {Sarah R.} and Olson, {J. M.} and A. Kibbler",

year = "1990",

month = jan,

doi = "10.1007/BF02655555",

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volume = "19",

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journal = "Journal of Electronic Materials",

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AU - Goral, J. P.

AU - Kurtz, Sarah R.

AU - Olson, J. M.

AU - Kibbler, A.

PY - 1990/1

Y1 - 1990/1

N2 - Selenium doped Ga0.51In0.49P films have been grown by metalorganic chemical vapour deposition at 600, 670 and 740° C. The extent of ordering of the Group III sublattice has been monitored by transmission electron microscopy. Ordering disappears at carrier concentrations on the order of 1018 cm-3 for samples grown at 600 and 740° C although a small degree of ordering persists in the samples grown at 670° C up to a carrier concentration of 1019 cm-3. At each growth temperature, the ordering observed decreased and the bandgap measured increased with increasing Se doping.

AB - Selenium doped Ga0.51In0.49P films have been grown by metalorganic chemical vapour deposition at 600, 670 and 740° C. The extent of ordering of the Group III sublattice has been monitored by transmission electron microscopy. Ordering disappears at carrier concentrations on the order of 1018 cm-3 for samples grown at 600 and 740° C although a small degree of ordering persists in the samples grown at 670° C up to a carrier concentration of 1019 cm-3. At each growth temperature, the ordering observed decreased and the bandgap measured increased with increasing Se doping.

KW - GaInP

KW - MOCVD

KW - ordering

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 1

ER -

Transmission Electron Microscopy Study of the Effect of Selenium Doping on the Ordering of GaInP2

Abstract

NREL Publication Number

Keywords

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