Transparent Conducting Electrodes on Silicon

Sarah R. Kurtz; Roy G. Gordon

doi:10.1016/0165-1633(87)90038-4

Transparent Conducting Electrodes on Silicon

Sarah R. Kurtz, Roy G. Gordon

Harvard University

Research output: Contribution to journal › Article › peer-review

8 Scopus Citations

Abstract

Stable, transparent, electrical contacts to silicon using fluorine doped tin oxide as the transparent conductor are described. A thin titanium nitride or titanium oxide film between the silicon and tin oxide prevents interdiffusion and therefore stabilizes the structure, while still retaining good electrical contact and high transparency. All of the films are made by atmospheric pressure chemical vapor deposition.

Original language	American English
Pages (from-to)	229-236
Number of pages	8
Journal	Solar Energy Materials
Volume	15
Issue number	4
DOIs	https://doi.org/10.1016/0165-1633(87)90038-4 https://doi.org/10.1016/0165-1633(87)90038-4
State	Published - 1987
Externally published	Yes

NREL Publication Number

ACNR/JA-212-10692

Access to Document

Cite this

@article{1785b63dc8c749c5bdc23887c427e257,

title = "Transparent Conducting Electrodes on Silicon",

abstract = "Stable, transparent, electrical contacts to silicon using fluorine doped tin oxide as the transparent conductor are described. A thin titanium nitride or titanium oxide film between the silicon and tin oxide prevents interdiffusion and therefore stabilizes the structure, while still retaining good electrical contact and high transparency. All of the films are made by atmospheric pressure chemical vapor deposition.",

author = "Kurtz, {Sarah R.} and Gordon, {Roy G.}",

year = "1987",

doi = "10.1016/0165-1633(87)90038-4",

language = "American English",

volume = "15",

pages = "229--236",

journal = "Solar Energy Materials",

issn = "0165-1633",

publisher = "Elsevier BV",

number = "4",

}

TY - JOUR

T1 - Transparent Conducting Electrodes on Silicon

AU - Kurtz, Sarah R.

AU - Gordon, Roy G.

PY - 1987

Y1 - 1987

N2 - Stable, transparent, electrical contacts to silicon using fluorine doped tin oxide as the transparent conductor are described. A thin titanium nitride or titanium oxide film between the silicon and tin oxide prevents interdiffusion and therefore stabilizes the structure, while still retaining good electrical contact and high transparency. All of the films are made by atmospheric pressure chemical vapor deposition.

AB - Stable, transparent, electrical contacts to silicon using fluorine doped tin oxide as the transparent conductor are described. A thin titanium nitride or titanium oxide film between the silicon and tin oxide prevents interdiffusion and therefore stabilizes the structure, while still retaining good electrical contact and high transparency. All of the films are made by atmospheric pressure chemical vapor deposition.

UR - http://www.scopus.com/inward/record.url?scp=0023345420&partnerID=8YFLogxK

U2 - 10.1016/0165-1633(87)90038-4

DO - 10.1016/0165-1633(87)90038-4

M3 - Article

AN - SCOPUS:0023345420

SN - 0165-1633

VL - 15

SP - 229

EP - 236

JO - Solar Energy Materials

JF - Solar Energy Materials

IS - 4

ER -

Transparent Conducting Electrodes on Silicon

Abstract

NREL Publication Number

Access to Document

Other files and links

Fingerprint

Cite this