Transparent Conducting Oxide Development for Electronics Applications

J. D. Perkins; J. J. Berry; M. F.A.M. Van Hest; A. N. Cavendor; A. J. Leenheer; R. P. O'Hayre; D. S. Ginley

doi:10.1109/ISAF.2008.4693955

Transparent Conducting Oxide Development for Electronics Applications

J. D. Perkins, J. J. Berry, M. F.A.M. Van Hest, A. N. Cavendor, A. J. Leenheer, R. P. O'Hayre, D. S. Ginley

Materials, Chemical, and Computational Science

Research output: Contribution to conference › Paper › peer-review

Abstract

We have employed both combinatorial composition spread and conventional single composition approaches to determine the relative roles of metals and oxygen stoichiometrics on the opto-electronic properties of amorphous In-Zn-O (a-IZO) thin film transparent conductors. Two major results were found. First, that the optimization of conductivity in a-IZO is a coupled process with the best metals composition depending upon the oxygen content of the sputter gas. Second, that the electron mobility as a function of carrier concentration is given by a common curve for all a-IZO films independent of the metals composition.

Original language	American English
Pages	Vol. 1: 1-2
Number of pages	2
DOIs	https://doi.org/10.1109/ISAF.2008.4693955 https://doi.org/10.1109/ISAF.2008.4693955
State	Published - 2008
Event	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Fe, NM, United States Duration: 23 Feb 2008 → 28 Feb 2008

Conference

Conference	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Country/Territory	United States
City	Santa Fe, NM
Period	23/02/08 → 28/02/08

NREL Publication Number

NREL/CP-520-45094

Keywords

materials science
thin film

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Perkins, J. D., Berry, J. J., Van Hest, M. F. A. M., Cavendor, A. N., Leenheer, A. J., O'Hayre, R. P., & Ginley, D. S. (2008). Transparent Conducting Oxide Development for Electronics Applications. Vol. 1: 1-2. Paper presented at 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008, Santa Fe, NM, United States. https://doi.org/10.1109/ISAF.2008.4693955, https://doi.org/10.1109/ISAF.2008.4693955

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title = "Transparent Conducting Oxide Development for Electronics Applications",

abstract = "We have employed both combinatorial composition spread and conventional single composition approaches to determine the relative roles of metals and oxygen stoichiometrics on the opto-electronic properties of amorphous In-Zn-O (a-IZO) thin film transparent conductors. Two major results were found. First, that the optimization of conductivity in a-IZO is a coupled process with the best metals composition depending upon the oxygen content of the sputter gas. Second, that the electron mobility as a function of carrier concentration is given by a common curve for all a-IZO films independent of the metals composition.",

keywords = "materials science, thin film",

author = "Perkins, {J. D.} and Berry, {J. J.} and {Van Hest}, {M. F.A.M.} and Cavendor, {A. N.} and Leenheer, {A. J.} and O'Hayre, {R. P.} and Ginley, {D. S.}",

year = "2008",

doi = "10.1109/ISAF.2008.4693955",

language = "American English",

pages = "Vol. 1: 1--2",

note = "17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 ; Conference date: 23-02-2008 Through 28-02-2008",

}

Perkins, JD, Berry, JJ, Van Hest, MFAM, Cavendor, AN, Leenheer, AJ, O'Hayre, RP & Ginley, DS 2008, 'Transparent Conducting Oxide Development for Electronics Applications', Paper presented at 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008, Santa Fe, NM, United States, 23/02/08 - 28/02/08 pp. Vol. 1: 1-2. https://doi.org/10.1109/ISAF.2008.4693955, https://doi.org/10.1109/ISAF.2008.4693955

TY - CONF

T1 - Transparent Conducting Oxide Development for Electronics Applications

AU - Perkins, J. D.

AU - Berry, J. J.

AU - Van Hest, M. F.A.M.

AU - Cavendor, A. N.

AU - Leenheer, A. J.

AU - O'Hayre, R. P.

AU - Ginley, D. S.

PY - 2008

Y1 - 2008

N2 - We have employed both combinatorial composition spread and conventional single composition approaches to determine the relative roles of metals and oxygen stoichiometrics on the opto-electronic properties of amorphous In-Zn-O (a-IZO) thin film transparent conductors. Two major results were found. First, that the optimization of conductivity in a-IZO is a coupled process with the best metals composition depending upon the oxygen content of the sputter gas. Second, that the electron mobility as a function of carrier concentration is given by a common curve for all a-IZO films independent of the metals composition.

AB - We have employed both combinatorial composition spread and conventional single composition approaches to determine the relative roles of metals and oxygen stoichiometrics on the opto-electronic properties of amorphous In-Zn-O (a-IZO) thin film transparent conductors. Two major results were found. First, that the optimization of conductivity in a-IZO is a coupled process with the best metals composition depending upon the oxygen content of the sputter gas. Second, that the electron mobility as a function of carrier concentration is given by a common curve for all a-IZO films independent of the metals composition.

KW - materials science

KW - thin film

UR - http://www.scopus.com/inward/record.url?scp=58149502085&partnerID=8YFLogxK

U2 - 10.1109/ISAF.2008.4693955

DO - 10.1109/ISAF.2008.4693955

M3 - Paper

AN - SCOPUS:58149502085

SP - Vol. 1: 1-2

T2 - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008

Y2 - 23 February 2008 through 28 February 2008

ER -

Transparent Conducting Oxide Development for Electronics Applications

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Keywords

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