Transparent Conducting Zinc Oxide Thin Films Doped with Aluminum and Molybdenum

Joel N. Duenow, Timothy A. Gessert, David M. Wood, Teresa M. Barnes, Matthew Young, Bobby To, Timothy J. Coutts

Research output: Contribution to journalArticlepeer-review

57 Scopus Citations


Undoped ZnO, ZnO:Al (0.5, 1, and 2 wt % Al2 O3), and ZnO:Mo (2 wt % Mo) films were deposited by radio-frequency magnetron sputtering. Optimal deposition temperature was found to be ∼200 °C for all films. Electron mobilities of 48 cm2 V-1 s-1 were achieved for undoped ZnO films using a sputtering gas with H2 Ar ratio of 0.3%; corresponding carrier concentrations were ∼3× 1019 cm-3. A target incorporating 0.5 wt % Al2 O3 in ZnO yielded films with mobility of 36 cm2 V-1 s-1 and carrier concentration of 3.4× 1020 cm-3. These films present comparable conductivity and lower free-carrier absorption than films grown from a target containing 2 wt % Al2 O3. Mo was found to be an n -type dopant of ZnO, though electrical and optical properties were inferior to those of ZnO:Al. Temperature-dependent Hall measurements of ZnO:Al films show evidence of a different scattering mechanism than ZnO:Mo films.

Original languageAmerican English
Pages (from-to)955-960
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
StatePublished - 2007

NREL Publication Number

  • NREL/JA-520-41071


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