Transparent Conducting ZnO Thin Films Doped with Al and Mo: Abstract D39.00009

Transparent conducting oxide (TCO) thin films are a vital part of photovoltaic cells, flat-panel displays, and electrochromic windows. ZnO-based TCOs, due to the relative abundance of Zn, may reduce production costs compared to those of the prevalent TCO In2O3:Sn (ITO). Undoped ZnO, ZnO:Al (0.5, 1, and 2 wt.% Al2O3), and ZnO:Mo (2 wt.%) films were deposited by RF magnetron sputtering. Controlledincorporation of H2 in the Ar sputtering ambient increased mobility of undoped ZnO by a factor of~20 to 48 cm2V-1s-1. H2 also appears to catalyze ionization of dopants. This enabled lightly doped ZnO:Al to provide comparable conductivity to the standard 2 wt.%-doped ZnO:Al while demonstrating reduced infrared absorption. Mo was found to be an n-type dopant of ZnO, though material properties didnot match those of ZnO:Al. Scattering mechanisms were investigated using temperature-dependent Hall measurements and the method of four coefficients. This abstract is subject to government rights.