Abstract
Results for a-Si characteristics/modeling; photocarrier drift mobilities in a-Si;H, ..mu..c-Si:H, CIGS; hole-conducting polymers as p-layer for a-Si and c-Si; IR spectra of p/i and n/i interfaces in a-Si.
Original language | American English |
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Number of pages | 50 |
State | Published - 2008 |
Bibliographical note
Work performed by Syracuse University, Syracuse, New YorkNREL Publication Number
- NREL/SR-520-44101
Keywords
- amorphous silicon
- CIGS
- drift mobility
- infrared spectra
- microcrystalline silicon
- polymers
- PV
- solar cells