Transport Properties and Defect States of a-Si:H Grown by HOMOCVD

    Research output: Contribution to journalArticle

    Original languageAmerican English
    Pages (from-to)51-58
    Number of pages8
    JournalJournal of Non-Crystalline Solids
    Issue number1,2
    StatePublished - 1984

    Bibliographical note

    Work performed by Thomas J. Watson Research Center, IBM Corporation, Yorktown Heights, New York

    NREL Publication Number

    • ACNR/JA-3993

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