Transport Properties and Defect States of a-Si:H Grown by HOMOCVD

Research output: Contribution to journal › Article

Original language	American English
Pages (from-to)	51-58
Number of pages	8
Journal	Journal of Non-Crystalline Solids
Volume	66
Issue number	1,2
DOIs	https://doi.org/10.1016/0022-3093(84)90297-7
State	Published - 1984

Work performed by Thomas J. Watson Research Center, IBM Corporation, Yorktown Heights, New York

NREL Publication Number

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title = "Transport Properties and Defect States of a-Si:H Grown by HOMOCVD",

author = "NREL",

note = "Work performed by Thomas J. Watson Research Center, IBM Corporation, Yorktown Heights, New York",

year = "1984",

doi = "10.1016/0022-3093(84)90297-7",

language = "American English",

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publisher = "Elsevier B.V.",

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T1 - Transport Properties and Defect States of a-Si:H Grown by HOMOCVD

AU - NREL, null

N1 - Work performed by Thomas J. Watson Research Center, IBM Corporation, Yorktown Heights, New York

PY - 1984

Y1 - 1984

U2 - 10.1016/0022-3093(84)90297-7

DO - 10.1016/0022-3093(84)90297-7

M3 - Article

SN - 0022-3093

VL - 66

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EP - 58

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 1,2

ER -