Transport Properties of GaAs(1-x)N(x) Thin Films Grown by Metalorganic Chemical Vapor Deposition

R. K. Ahrenkiel; S. W. Johnston; B. M. Keyes; D. J. Friedman; S. M. Vernon

doi:10.1063/1.1328774

Transport Properties of GaAs(1-x)N(x) Thin Films Grown by Metalorganic Chemical Vapor Deposition

R. K. Ahrenkiel, S. W. Johnston, B. M. Keyes, D. J. Friedman, S. M. Vernon

Research output: Contribution to journal › Article › peer-review

18 Scopus Citations

Abstract

A series of devices with the structure GaAs/GaAs_1-xN_x/GaAs and 0.0<;×<0.03 have been grown by metalorganic chemical vapor deposition. The transient photoconductive decay of these structures is measured as a function of excitation wavelength and injection level. The decay process is generally described by a stretched exponential function with anomously large decay times. The photoconductive excitation spectrum extends into the infrared, well beyond the bandgap of the given alloy. The processes here can be explained by nitrogen clusters that produce charge separation.

Original language	American English
Pages (from-to)	3794-3796
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	23
DOIs	https://doi.org/10.1063/1.1328774 https://doi.org/10.1063/1.1328774
State	Published - 4 Dec 2000

NREL Publication Number

NREL/JA-520-28480

Access to Document

Cite this

@article{631fa8d3b1814bc8ae5d84f268595a25,

title = "Transport Properties of GaAs(1-x)N(x) Thin Films Grown by Metalorganic Chemical Vapor Deposition",

abstract = "A series of devices with the structure GaAs/GaAs1-xNx/GaAs and 0.0<;×<0.03 have been grown by metalorganic chemical vapor deposition. The transient photoconductive decay of these structures is measured as a function of excitation wavelength and injection level. The decay process is generally described by a stretched exponential function with anomously large decay times. The photoconductive excitation spectrum extends into the infrared, well beyond the bandgap of the given alloy. The processes here can be explained by nitrogen clusters that produce charge separation.",

author = "Ahrenkiel, {R. K.} and Johnston, {S. W.} and Keyes, {B. M.} and Friedman, {D. J.} and Vernon, {S. M.}",

year = "2000",

month = dec,

day = "4",

doi = "10.1063/1.1328774",

language = "American English",

volume = "77",

pages = "3794--3796",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Transport Properties of GaAs(1-x)N(x) Thin Films Grown by Metalorganic Chemical Vapor Deposition

AU - Ahrenkiel, R. K.

AU - Johnston, S. W.

AU - Keyes, B. M.

AU - Friedman, D. J.

AU - Vernon, S. M.

PY - 2000/12/4

Y1 - 2000/12/4

N2 - A series of devices with the structure GaAs/GaAs1-xNx/GaAs and 0.0<;×<0.03 have been grown by metalorganic chemical vapor deposition. The transient photoconductive decay of these structures is measured as a function of excitation wavelength and injection level. The decay process is generally described by a stretched exponential function with anomously large decay times. The photoconductive excitation spectrum extends into the infrared, well beyond the bandgap of the given alloy. The processes here can be explained by nitrogen clusters that produce charge separation.

AB - A series of devices with the structure GaAs/GaAs1-xNx/GaAs and 0.0<;×<0.03 have been grown by metalorganic chemical vapor deposition. The transient photoconductive decay of these structures is measured as a function of excitation wavelength and injection level. The decay process is generally described by a stretched exponential function with anomously large decay times. The photoconductive excitation spectrum extends into the infrared, well beyond the bandgap of the given alloy. The processes here can be explained by nitrogen clusters that produce charge separation.

UR - http://www.scopus.com/inward/record.url?scp=0001369796&partnerID=8YFLogxK

U2 - 10.1063/1.1328774

DO - 10.1063/1.1328774

M3 - Article

AN - SCOPUS:0001369796

SN - 0003-6951

VL - 77

SP - 3794

EP - 3796

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Transport Properties of GaAs(1-x)N(x) Thin Films Grown by Metalorganic Chemical Vapor Deposition

Abstract

NREL Publication Number

Access to Document

Other files and links

Fingerprint

Cite this