Trap-Dominated Minority-Carrier Recombination in GaInNAs pn Junctions

D. J. Friedman; J. F. Geisz; W. K. Metzger; S. W. Johnston

doi:10.1063/1.1596711

Trap-Dominated Minority-Carrier Recombination in GaInNAs pn Junctions

D. J. Friedman, J. F. Geisz, W. K. Metzger, S. W. Johnston

National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

9 Scopus Citations

Abstract

The trap dominated minority carrier recombination in GaInNAs pn junctions was analyzed. The dark current was found to be dominated by recombination through traps. The results show the trap energy to be roughly constant at about 0.4eV below the conduction band or above the valence band as the band gap decreases from about 1.1 to 0.9 eV.

Original language	American English
Pages (from-to)	698-700
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	4
DOIs	https://doi.org/10.1063/1.1596711 https://doi.org/10.1063/1.1596711
State	Published - 2003

NREL Publication Number

NREL/JA-520-33923

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@article{211ebd90c04249c2986bd8b42a93fb5b,

title = "Trap-Dominated Minority-Carrier Recombination in GaInNAs pn Junctions",

abstract = "The trap dominated minority carrier recombination in GaInNAs pn junctions was analyzed. The dark current was found to be dominated by recombination through traps. The results show the trap energy to be roughly constant at about 0.4eV below the conduction band or above the valence band as the band gap decreases from about 1.1 to 0.9 eV.",

author = "Friedman, {D. J.} and Geisz, {J. F.} and Metzger, {W. K.} and Johnston, {S. W.}",

year = "2003",

doi = "10.1063/1.1596711",

language = "American English",

volume = "83",

pages = "698--700",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Trap-Dominated Minority-Carrier Recombination in GaInNAs pn Junctions

AU - Friedman, D. J.

AU - Geisz, J. F.

AU - Metzger, W. K.

AU - Johnston, S. W.

PY - 2003

Y1 - 2003

N2 - The trap dominated minority carrier recombination in GaInNAs pn junctions was analyzed. The dark current was found to be dominated by recombination through traps. The results show the trap energy to be roughly constant at about 0.4eV below the conduction band or above the valence band as the band gap decreases from about 1.1 to 0.9 eV.

AB - The trap dominated minority carrier recombination in GaInNAs pn junctions was analyzed. The dark current was found to be dominated by recombination through traps. The results show the trap energy to be roughly constant at about 0.4eV below the conduction band or above the valence band as the band gap decreases from about 1.1 to 0.9 eV.

UR - http://www.scopus.com/inward/record.url?scp=0041511950&partnerID=8YFLogxK

U2 - 10.1063/1.1596711

DO - 10.1063/1.1596711

M3 - Article

AN - SCOPUS:0041511950

SN - 0003-6951

VL - 83

SP - 698

EP - 700

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Trap-Dominated Minority-Carrier Recombination in GaInNAs pn Junctions

Abstract

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