Trap-Dominated Minority-Carrier Recombination in GaInNAs pn Junctions

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The trap dominated minority carrier recombination in GaInNAs pn junctions was analyzed. The dark current was found to be dominated by recombination through traps. The results show the trap energy to be roughly constant at about 0.4eV below the conduction band or above the valence band as the band gap decreases from about 1.1 to 0.9 eV.

Original languageAmerican English
Pages (from-to)698-700
Number of pages3
JournalApplied Physics Letters
Issue number4
StatePublished - 2003

NREL Publication Number

  • NREL/JA-520-33923


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