Trapping of Hydrogen at Native Defects

Trapping of Hydrogen at Native Defects

Research output: Contribution to conference › Paper

Abstract

The interactions between hydrogen and intrinsic defects in silicon are studied using ab-initio molecular dynamics simulations in periodic supercells and Hartree-Fock in saturated clusters. The complexes formed by one self-initerstitial and one to four H's and the trapping of a single H at various vacancy aggregates are discussed. The binding energies, structures, and properties of these defectsare calculated.

Original language	American English
Pages	128-131
Number of pages	4
State	Published - 1999
Event	Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes - Breckenridge, Colorado Duration: 9 Aug 1999 → 11 Aug 1999

Conference

Conference	Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes
City	Breckenridge, Colorado
Period	9/08/99 → 11/08/99

Bibliographical note

Work performed by Texas Tech University, Lubbock, Texas

NREL Publication Number

NREL/CP-27187

Cite this

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title = "Trapping of Hydrogen at Native Defects",

abstract = "The interactions between hydrogen and intrinsic defects in silicon are studied using ab-initio molecular dynamics simulations in periodic supercells and Hartree-Fock in saturated clusters. The complexes formed by one self-initerstitial and one to four H's and the trapping of a single H at various vacancy aggregates are discussed. The binding energies, structures, and properties of these defectsare calculated.",

author = "NREL",

note = "Work performed by Texas Tech University, Lubbock, Texas; Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes ; Conference date: 09-08-1999 Through 11-08-1999",

year = "1999",

language = "American English",

pages = "128--131",

}

TY - CONF

T1 - Trapping of Hydrogen at Native Defects

AU - NREL, null

N1 - Work performed by Texas Tech University, Lubbock, Texas

PY - 1999

Y1 - 1999

N2 - The interactions between hydrogen and intrinsic defects in silicon are studied using ab-initio molecular dynamics simulations in periodic supercells and Hartree-Fock in saturated clusters. The complexes formed by one self-initerstitial and one to four H's and the trapping of a single H at various vacancy aggregates are discussed. The binding energies, structures, and properties of these defectsare calculated.

AB - The interactions between hydrogen and intrinsic defects in silicon are studied using ab-initio molecular dynamics simulations in periodic supercells and Hartree-Fock in saturated clusters. The complexes formed by one self-initerstitial and one to four H's and the trapping of a single H at various vacancy aggregates are discussed. The binding energies, structures, and properties of these defectsare calculated.

M3 - Paper

SP - 128

EP - 131

T2 - Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes

Y2 - 9 August 1999 through 11 August 1999

ER -

Trapping of Hydrogen at Native Defects

Abstract

Conference

Bibliographical note

NREL Publication Number

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Cite this