Abstract
Hydrogen, though essential for device-quality amorphous silicon, likely contributes to the light-induced degradation process (Staebler-Wronski effect) that reduces the solar cell efficiency by about 4 absolute percent. We are testing the role of hydrogen by using its isotope tritium. When tritium bonded to Si spontaneously decays into inert helium-3, it should leave behind the Si dangling bonddefect. We have studied degradation due to tritium and note its resemblance to the Staebler-Wronski effect. Surprisingly, 100x fewer defects are created than expected from the tritium decay rate, suggesting a mechanism that heals most of the defects, even at temperatures down to 4 K. We consider different mechanisms for the thermal and athermal healing processes (e.g. motion of hydrogen, effectof beta-electrons, decay of hydrogen-tritium molecules). Our findings shed new light on the degradation mechanism in a Si:H and help reveal the role of hydrogen and structural rearrangements near a newly created defect.
Original language | American English |
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Number of pages | 5 |
State | Published - 2005 |
Event | 2004 DOE Solar Energy Technologies Program Review Meeting - Denver, Colorado Duration: 25 Oct 2004 → 28 Oct 2004 |
Conference
Conference | 2004 DOE Solar Energy Technologies Program Review Meeting |
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City | Denver, Colorado |
Period | 25/10/04 → 28/10/04 |
Bibliographical note
Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140)NREL Publication Number
- NREL/CP-520-37023
Keywords
- amorphous silicon
- beta-electrons
- hydrogen
- isotope tritium
- magnetic resonance
- photoluminescence absorption spectroscopy (PLAS)
- photothermal deflection spectroscopy (PDS)
- PV
- solar cells
- Staebler-Wronski effect
- thin films