Tritium Induced Defects in Amorphous Silicon

J. Whitaker; J. Viner; S. Zukotynski; E. Johnson; P. C. Taylor; P. Stradins

doi:10.1557/proc-808-a2.4

Tritium Induced Defects in Amorphous Silicon

J. Whitaker, J. Viner, S. Zukotynski, E. Johnson, P. C. Taylor, P. Stradins

Chemistry and Nanoscience

Research output: Contribution to conference › Paper › peer-review

2 Scopus Citations

Abstract

We report the growth of tritium induced defects in tritium doped hydrogenated amorphous silicon (a-Si:H,T) as measured by electron spin resonance (ESR) and photothermal deflection spectroscopy (PDS). The measurements allow one to examine the accumulation of defects in a-Si:H,T where the defect production mechanism is known. Defects produced by tritium decay are found to be much less numerous than the number of decayed tritium atoms and they are metastable like Staebler-Wronski defects. These results provide new insight into the metastable defect creation and the role of hydrogen motion.

Original language	American English
Pages	159-164
Number of pages	6
DOIs	https://doi.org/10.1557/proc-808-a2.4
State	Published - 2004
Event	Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium - San Francisco, California Duration: 13 Apr 2004 → 16 Apr 2004

Conference

Conference	Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium
City	San Francisco, California
Period	13/04/04 → 16/04/04

NREL Publication Number

NREL/CP-520-37512

Access to Document

10.1557/proc-808-a2.4

Cite this

@conference{22b70c8e95f04cef85442f6695a8ad9b,

title = "Tritium Induced Defects in Amorphous Silicon",

abstract = "We report the growth of tritium induced defects in tritium doped hydrogenated amorphous silicon (a-Si:H,T) as measured by electron spin resonance (ESR) and photothermal deflection spectroscopy (PDS). The measurements allow one to examine the accumulation of defects in a-Si:H,T where the defect production mechanism is known. Defects produced by tritium decay are found to be much less numerous than the number of decayed tritium atoms and they are metastable like Staebler-Wronski defects. These results provide new insight into the metastable defect creation and the role of hydrogen motion.",

author = "J. Whitaker and J. Viner and S. Zukotynski and E. Johnson and Taylor, {P. C.} and P. Stradins",

year = "2004",

doi = "10.1557/proc-808-a2.4",

language = "American English",

pages = "159--164",

note = "Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium ; Conference date: 13-04-2004 Through 16-04-2004",

}

TY - CONF

T1 - Tritium Induced Defects in Amorphous Silicon

AU - Whitaker, J.

AU - Viner, J.

AU - Zukotynski, S.

AU - Johnson, E.

AU - Taylor, P. C.

AU - Stradins, P.

PY - 2004

Y1 - 2004

N2 - We report the growth of tritium induced defects in tritium doped hydrogenated amorphous silicon (a-Si:H,T) as measured by electron spin resonance (ESR) and photothermal deflection spectroscopy (PDS). The measurements allow one to examine the accumulation of defects in a-Si:H,T where the defect production mechanism is known. Defects produced by tritium decay are found to be much less numerous than the number of decayed tritium atoms and they are metastable like Staebler-Wronski defects. These results provide new insight into the metastable defect creation and the role of hydrogen motion.

AB - We report the growth of tritium induced defects in tritium doped hydrogenated amorphous silicon (a-Si:H,T) as measured by electron spin resonance (ESR) and photothermal deflection spectroscopy (PDS). The measurements allow one to examine the accumulation of defects in a-Si:H,T where the defect production mechanism is known. Defects produced by tritium decay are found to be much less numerous than the number of decayed tritium atoms and they are metastable like Staebler-Wronski defects. These results provide new insight into the metastable defect creation and the role of hydrogen motion.

UR - http://www.scopus.com/inward/record.url?scp=12844267619&partnerID=8YFLogxK

U2 - 10.1557/proc-808-a2.4

DO - 10.1557/proc-808-a2.4

M3 - Paper

AN - SCOPUS:12844267619

SP - 159

EP - 164

T2 - Amorphous and Nanocrystalline Silicon Science and Technology: Materials Research Society Symposium

Y2 - 13 April 2004 through 16 April 2004

ER -

Tritium Induced Defects in Amorphous Silicon

Abstract

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NREL Publication Number

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