Tunable Bandgap GaInAsP Solar Cells With 18.7% Photoconversion Efficiency Synthesized by Low-Cost and High-Growth Rate Hydride Vapor Phase Epitaxy

As market-dominant Si solar cell technology approaches its practical efficiency limit of 27.1%, a key challenge for the photovoltaic industry is to search for a low-cost ∼1.7 eV top cell that can enable cost-competitive tandems with solar-to-electricity conversion efficiency exceeding 30%. III-V semiconductors offer tunable bandgap and unparalleled efficiencies for tandem devices. However, their high manufacturing cost has been the biggest impediment for market entry. Hydride vapor phase epitaxy (HVPE) has recently reemerged as a promising low-cost alternative to incumbent metalorganic chemical vapor deposition (MOCVD) for III-V solar cells. Here, we show the first demonstration of ∼1.7 eV GaInAsP solar cells that achieve nearly 19% photoconversion efficiency synthesized by HVPE. The unprecedented growth rate of ∼42 μm/h achieved via HVPE (∼10× faster than conventional MOCVD) allowed the device layers to be deposited in less than seven minutes. Nearly abrupt and chemically distinct heterointerfaces were attained in spite of high-growth rates, which are known to exacerbate phase separation in GaInAsP alloys. Demonstration of ideality factor of n= 1 at max power point highlight the advancements in growth optimization and device design. The results presented here highlight a promising path toward tunable bandgap, high-growth rate, low-cost, and high-efficiency GaInAsP devices for direct solar-to-electricity and solar-to-hydrogen conversion.