Abstract
The dielectric properties of SrTiO3 (STO)/YBCO and STO films deposited of LaAlO3 substrates were evaluated, for potential varactor applications wherein the capacitance is altered via a dc voltage applied across the STO film. The optimal growth temperature for the STO films in the STO/YBCO structures was 800 degrees C; higher temperatures resulted in interfacial degradation and poor film quality,mand lower temperatures resulted in films with lower dielectric constants (Epsilon tau) and tunabilities. Interdigital varactors comprised of STO films deposited directly on LaAlO3 displayed higher tunabilities and significantly lower losses.
Original language | American English |
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Pages | 3512-3515 |
Number of pages | 4 |
DOIs | |
State | Published - 1997 |
NREL Publication Number
- NREL/CP-520-24389