Tuning the Physical Properties of Amorphous In-Zn-Sn-O Thin Films Using Combinatorial Sputtering

P. F. Ndione; A. Zakutayev; M. Kumar; C. E. Packard; J. J. Berry; J. D. Perkins; D. S. Ginley

doi:10.1557/mrc.2016.57

Tuning the Physical Properties of Amorphous In-Zn-Sn-O Thin Films Using Combinatorial Sputtering

P. F. Ndione, A. Zakutayev, M. Kumar, C. E. Packard, J. J. Berry, J. D. Perkins, D. S. Ginley

Research output: Contribution to journal › Article › peer-review

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Abstract

Transparent conductive oxides and amorphous oxide semiconductors are important materials for many modern technologies. Here, we explore the ternary indium zinc tin oxide (IZTO) using combinatorial synthesis and spatially resolved characterization. The electrical conductivity, work function, absorption onset, mechanical hardness, and elastic modulus of the optically transparent (>85%) amorphous IZTO thin films were found to be in the range of 10-2415 S/cm, 4.6-5.3 eV, 3.20-3.34 eV, 9.0-10.8 GPa, and 111-132 GPa, respectively, depending on the cation composition and the deposition conditions. This study enables control of IZTO performance over a broad range of cation compositions.

Original language	American English
Pages (from-to)	360-366
Number of pages	7
Journal	MRS Communications
Volume	6
Issue number	4
DOIs	https://doi.org/10.1557/mrc.2016.57 https://doi.org/10.1557/mrc.2016.57
State	Published - 1 Dec 2016

Bibliographical note

Publisher Copyright:
© Materials Research Society 2016.

NREL Publication Number

NREL/JA-5K00-66557

Keywords

amorphous
combinatorial synthesis
high-throughput experiments
ITZO
IZTO
oxide
ZITO

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title = "Tuning the Physical Properties of Amorphous In-Zn-Sn-O Thin Films Using Combinatorial Sputtering",

abstract = "Transparent conductive oxides and amorphous oxide semiconductors are important materials for many modern technologies. Here, we explore the ternary indium zinc tin oxide (IZTO) using combinatorial synthesis and spatially resolved characterization. The electrical conductivity, work function, absorption onset, mechanical hardness, and elastic modulus of the optically transparent (>85%) amorphous IZTO thin films were found to be in the range of 10-2415 S/cm, 4.6-5.3 eV, 3.20-3.34 eV, 9.0-10.8 GPa, and 111-132 GPa, respectively, depending on the cation composition and the deposition conditions. This study enables control of IZTO performance over a broad range of cation compositions.",

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AU - Ndione, P. F.

AU - Zakutayev, A.

AU - Kumar, M.

AU - Packard, C. E.

AU - Berry, J. J.

AU - Perkins, J. D.

AU - Ginley, D. S.

N1 - Publisher Copyright: © Materials Research Society 2016.

PY - 2016/12/1

Y1 - 2016/12/1

N2 - Transparent conductive oxides and amorphous oxide semiconductors are important materials for many modern technologies. Here, we explore the ternary indium zinc tin oxide (IZTO) using combinatorial synthesis and spatially resolved characterization. The electrical conductivity, work function, absorption onset, mechanical hardness, and elastic modulus of the optically transparent (>85%) amorphous IZTO thin films were found to be in the range of 10-2415 S/cm, 4.6-5.3 eV, 3.20-3.34 eV, 9.0-10.8 GPa, and 111-132 GPa, respectively, depending on the cation composition and the deposition conditions. This study enables control of IZTO performance over a broad range of cation compositions.

AB - Transparent conductive oxides and amorphous oxide semiconductors are important materials for many modern technologies. Here, we explore the ternary indium zinc tin oxide (IZTO) using combinatorial synthesis and spatially resolved characterization. The electrical conductivity, work function, absorption onset, mechanical hardness, and elastic modulus of the optically transparent (>85%) amorphous IZTO thin films were found to be in the range of 10-2415 S/cm, 4.6-5.3 eV, 3.20-3.34 eV, 9.0-10.8 GPa, and 111-132 GPa, respectively, depending on the cation composition and the deposition conditions. This study enables control of IZTO performance over a broad range of cation compositions.

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KW - high-throughput experiments

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Tuning the Physical Properties of Amorphous In-Zn-Sn-O Thin Films Using Combinatorial Sputtering

Abstract

Bibliographical note

NREL Publication Number

Keywords

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